论文名称为“A C-band high-efficiency power amplifier MMIC with second-harmonic control in 0.25 μm GaN HEMT technology”。针对现有MMIC功率放大器效率低的问题，该文提出了一种基于低损耗二次谐波控制网络的C-band 高效率MMIC功率放大器。所设计的GaN MMIC功率放大器频率范围为5.6~6.3 GHz，在28 V的工作电压下，平均输出功率为45.0-45.5 dBm（31.6-35.5 W），功率附加效率（PAE）为59%-61.8%，增益为26-28.5 dB。工作主要完成人谢恒、程钰间、樊勇。

论文链接：https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9517288

Abstract— This letter presents a C-band high-efficiency fully integrated high-power amplifier (HPA) monolithic microwave integrated circuit (MMIC) in 0.25 µm gallium nitride (GaN) high electron mobility transistor (HEMT) technology. The proposed GaN HPA MMIC consists of two amplifying stages, and its output stage includes eight transistors in parallel. In order to realize the high efficiency, a low-loss harmonic control network (HCN) using a parallel LC resonate block is applied to obtain the optimum load impedance to each transistor employed in the output stage of the HPA at both f₀ and 2 f₀. Thus, the designed GaN HPA can operate in pulse conditions of 100 µs pulse width and 10% of duty cycle over the frequency from 5.6 to 6.3 GHz. The proposed high-efficiency GaN HPA MMIC provides an average output power of 45.0–45.5 dBm (31.6–35.5 W) with a power added efficiency (PAE) of 59%–61.8%, and a gain of 26–28.5 dB under a drain voltage of 28 V. The area of the proposed GaN HPA MMIC is 4.2 mm × 4 mm including pads.

Index Terms— Gallium nitride (GaN), high efficiency, monolithic microwave integrated circuit (MMIC), power amplifier (PA).