论文名称“A Ka-band watt-level high-efficiency doherty amplifier MMIC in 90-nm GaAs technology”，本文介绍了一种采用90 nm GaAs pHEMT技术的Ka波段瓦级高效Doherty功率放大器微波单片集成电路。为了实现6dB功率回退下的高效Doherty功率放大器，本文将匹配网络和负载调制网络直接组合，构成一种低损耗紧凑型Doherty输出网络。通过优化Doherty功率放大器的峰值放大器，保证在6dB功率回退水平下有足够的负载调制。测量结果显示，本文提出的Doherty功率放大器在26.5至30.5 GHz的频带内，饱和输出功率在29.5–30 dBm范围内，相应的峰值功率附加效率35%–40%范围内，在6dB功率回退下的峰值功率附加效率在25%–30.2%范围内。该Doherty功率放大器微波单片集成电路在5G毫米波应用中具有良好的潜力。工作主要完成人：谢恒，樊勇，李汪洋，王磊，程钰间。 

论文链接：https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9896937

Abstract— This letter presents a Ka-band watt-level high-efficiency Doherty power amplifier (DPA) monolithic microwave integrated circuit (MMIC) in 90-nm gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (pHEMT) technology. To realize the high efficiency of DPA at 6-dB power back-off (PBO), a low-loss compact Doherty output network is proposed to directly combine the matching network and the load modulation network (LMN) into a compact network. Then, the peaking amplifier of DPA is an optimized design to guarantee a sufficient load modulation at the 6-dB PBO level. The proposed DPA exhibits a measured saturation output power in the range of 29.5-30 dBm, with a corresponding peak power-added efficiency (PAE) in the range of 35%-40% from 26.5 to 30.5 GHz. Moreover, the PAE at the 6-dB PBO level of the proposed DPA is in the range of 25%-30.2% from 26.5 to 30.5 GHz.

Index Terms—5G communication, Doherty power amplifier (DPA), gallium arsenide (GaAs), high efficiency, high gain.