兰长勇

个人信息Personal Information

副教授 硕士生导师

性别:男

毕业院校:南京大学

学历:博士研究生毕业

学位:理学博士学位

在职信息:在岗

所在单位:光电科学与工程学院

学科:光学工程

办公地点:4号科研楼B区(光电学院)#310-3

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Large-area synthesis of monolayer WS2 and its ambient-sensitive photo-detecting performance

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发表刊物:Nanoscale

摘要:We demonstrate the synthesis of large-area monolayer WS2 films by chemical vapor deposition (CVD) and investigate their photoresponse properties by fabricating n-type field effect transistors (FETs) with Al as the ohmic contact. Our CVD-grown monolayer WS2 shows an electron mobility of 0.91 cm2 V−1 s−1 and an ON/OFF ratio of 106, indicating its comparable electronic properties to the mechanically exfoliated flake sample. In a vacuum, by applying a gate bias (60 V), the responsivity of the monolayer WS2 phototransistor can increase up to 18.8 mA W−1 and a decent sub-second level response time c

论文类型:基础研究

卷号:7

期号:14

页面范围:5974-5980

是否译文:

发表时间:2015-03-26

收录刊物转向链接:pubs.rsc.org/en/content/articlelanding/nr/2015/c5nr01205h#!divAbstract

发表时间:2015-03-26