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高温SiC DMOS器件电热物理场耦合模型与加固新结构研究

2020-07-08 Hits:

Status:结题

Note:国家自然科学基金面上项目

Supported by:国家自然科学基金面上项目

Pre One:SiC IGBT三维多沟道电荷调制增强新结构与模型研究

Next One:超大功率射频LDMOS的产品研究

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

Recommended Ph.D.Supervisor 》

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