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Investigation and Failure Mode of Asymmetric and Double Trench SiC MOSFETs Under Avalanche Conditions

2020-07-08 Hits:

Journal:IEEE Transactions on Power Electronics

First Author:Xiaochuan Deng

Document Type:M

Volume:35

Issue:8

Page Number:8524-8531

Translation or Not:no

Date of Publication:2020-07-08

Date of Publication:2020-07-08

Pre One:Short-circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

Next One:A Novel SiC MOSFET with Embedded Auto-adjust JFET with Improved Short Circuit Performance

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

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