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Characterization and Fabrication of the CFM‑JTE for 4H‑SiC Power Device with High‑Efficiency Protection and Increased JTE Dose Tolerance Window

2020-07-08 Hits:

Journal:Nanoscale Research Letters

Correspondence Author:Xiaochuan Deng

Volume:15

Page Number:211

Translation or Not:no

Date of Publication:2020-10-01

Date of Publication:2020-10-01

Pre One:An Accumulation Mode RF Laterally Double Diffused MOSFET With Improved Performance

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

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