• Click:

Current position: Home  >  Scientific Research  >  Paper Publications

Paper Publications

Investigation of Failure Mechanisms of 1200V Rated Trench SiC MOSFETs under Repetitive Avalanche Stress

2023-02-02 Hits:

Journal:IEEE Transactions on Power Electronics

First Author:Xiaochuan Deng

Volume:37

Issue:9

Page Number:10562-10571

Translation or Not:no

Date of Publication:2022-09-01

Date of Publication:2022-09-01

Next One:Short-circuit Capability Prediction and Failure Mode of Asymmetric and Double Trench SiC MOSFETs

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

Recommended Ph.D.Supervisor 》

The Last Update Time:--

Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054  |  Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731  |   Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved