Current position: Home > Scientific Research > Patents
Patents
碳化硅MOSFET器件及其制作方法
2020-07-08 Hits:Affilication of Author(s):电子科技大学
Type of Patent:中国发明专利
State of Patent:授权
Service Invention or Not:no
Next One:一种碳化硅器件的栅槽制作方法
Gender:Male
Education Level:With Certificate of Graduation for Doctorate Study
Degree:Doctor of Engineering
Status:On the job
E-Mail: