Current position: Home > Scientific Research > Patents
Patents
一种硒化铋材料的化学刻蚀方法
2018-02-02 Hits:Type of Patent:发明
State of Patent:Authorized patents
Authorization number:ZL201610051414.6
Service Invention or Not:no
Pre One:一种以Bi2Se3薄膜为接触层的硅肖特基结及制备方法
Next One:一种制备硫系化合物异质结构的装置及其制备方法
Gender:Male
Education Level:With Certificate of Graduation for Doctorate Study
Alma Mater:Institute of Physics, Chinese Adademy of Sciences
Degree:Doctor of Science
Status:On the job
School/Department:School of Materials and Energy
Business Address:Room 102, East Block, Computer Science Building, Shahe Campus of UESTC, Chengdu, PRC.
Contact Information:
E-Mail: