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一种在硅衬底上生长锑化铟薄膜的方法
2018-02-02 Hits:Type of Patent:发明
State of Patent:Pending patent
Application Number:CN201611202065.X
Service Invention or Not:no
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李含冬
Gender:Male
Education Level:With Certificate of Graduation for Doctorate Study
Alma Mater:Institute of Physics, Chinese Adademy of Sciences
Degree:Doctor of Science
Status:On the job
School/Department:School of Materials and Energy
Business Address:Room 102, East Block, Computer Science Building, Shahe Campus of UESTC, Chengdu, PRC.
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