Qr code
University of Electronic Science and Technology of China 中文
wangzeheng


Gender : Male
Alma Mater : Univ. of Elec. Sci. and Tech. of China (UESTC)
Education Level : With Certificate of Graduation for Study as Master's Candidates
Degree : Master's Degree
Status : On the job
School/Department : School of Information and Software Engineering
Date of Employment : 2018-09-01
Email :
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Personal Profile

Paper published (seleted)

Z. Wang, J. Cao, R. Sun, F. Wang, Y. Yao, Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate, Superlattices Microstruct. 120 (2018) 753–758. doi:10.1016/j.spmi.2018.06.045.

Z. Wang, J. Cao, F. Wang, W. Chen, B. Zhang, S. Guo, Y. Yao, Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate, Superlattices Microstruct. 122 (2018) 343–348. doi:10.1016/j.spmi.2018.07.016.

Z. Wang, W. Chen, F. Wang, J. Cao, R. Sun, K. Ren, Y. Luo, S. Guo, Z. Wang, X. Jin, L. Yang, B. Zhang, Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage, Superlattices Microstruct. 117 (2018) 330–335. doi:10.1016/j.spmi.2018.03.063.

Z. Wang, F. Wang, S. Guo, Z. Wang, Simulation study of high-reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode, Micro Nano Lett. 12 (2017) 660–663. doi:10.1049/mnl.2017.0057.

Y.C. Liang, K. Ren, S.J. Chua, Z. Wang, X. Gong, PS-3-08 High Sensitivity Hall-Effect Sensor on the AlGaN / GaN Fin-HEMT Structure, (2018) 939–940.

Z. Wang, B. Zhang, Q. Zhou, Y. Fang, X. Zhou, Y. Shi, Y. Lv, Z. Feng, L. Liu, Y.G. Wang, A. Zhang, Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection, Electron. Lett. 51 (2015) 1889–1891. doi:10.1049/el.2015.2885.

Q. Zhou, A. Zhang, R. Zhu, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, W. Chen, B. Zhang, Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-off GaN MOSFETs with High Faulty Turn-on Immunity, in: 2015: pp. 1373–1375.

Q. Zhou, L. Liu, A. Zhang, B. Chen, Y. Jin, Y. Shi, Z. Wang, W. Chen, B. Zhang, 7.6V threshold voltage high-performance normally-off Al2O3/GaN MOSFET achieved by interface charge engineering, IEEE Electron Device Lett. 37 (2016) 165–168. doi:10.1109/LED.2015.2511026.

Y. Yang, Q. Zhou, Y. Shi, Z. Wang, L. Liu, K. Hu, R. Zhu, W. Chen, B. Zhang, 0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate, 2016 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol. ICSICT 2016 - Proc. (2017) 1041–1043. doi:10.1109/ICSICT.2016.7998644.

R. Zhu, Q. Zhou, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, W. Chen, B. Zhang, High performance normally-off Al2O3/GaN MOSFETs with record high threshold voltage by interface charge engineering, 2016 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol. ICSICT 2016 - Proc. (2017) 1038–1040. doi:10.1109/ICSICT.2016.7998643.

Q. Zhou, Z.H. Wang, X.Y. Zhou, A.B. Zhang, Y.Y. Shi, L. Liu, Y.G. Wang, Y.L. Fang, Y.J. Lv, Z.H. Feng, B. Zhang, Physics of dynamic threshold voltage and steep subthreshold swing in Al2O3-InAlN-GaN MOSHEMTs, Semicond. Sci. Technol. 31 (2016). doi:10.1088/0268-1242/31/3/035005.

F. Wang, W. Chen, Z. Wang, R. Sun, J. Wei, X. Li, Y. Shi, X. Jin, X. Xu, N. Chen, Q. Zhou, B. Zhang, Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode, Superlattices Microstruct. 105 (2017) 132–138. doi:10.1016/j.spmi.2017.03.029.


Patents published (seleted)

Wanjun Chen, Zeheng Wang, Li Liu, Guanhao Hu, Jian Li, Qi Zhou and Bo Zhang, "An enhanced HEMT with SBD integrated," P.R.C. Patent, App. No.201510483325.4.

Wanjun Chen, Zeheng Wang, Yajie Xin, Guanhao Hu, Yijun Shi, Qi Zhou and Bo Zhang, "A HEMT," P.R.C. Patent, App. No. 201610650111.6.

Qi Zhou, Jian Li, Zeheng Wang, Yuanyuan Shi, Anbang Zhang, Li Liu, Bo Zhang, "A GaN heterojunction power diode with grid control structure," P.R.C. Patent, App. No. 2015104561955.

Wanjun Chen, Yijun Shi, Zeheng Wang, Guanhao Hu, Li Liu, Qi Zhou, Bo Zhang, "An enhanced HEMT device," P.R.C. Patent, App. No. 201510713864.2.

Qi Zhou, Guanhao Hu, Yang Jin, Bowen Chen, Zeheng Wang, Li Liu, Wanjun Chen, Bo Zhang, "A method of threshold voltage modulation for enhanced III-nitride semiconductor device," P.R.C. Patent, App. No. 201511026317.3.

Qi Zhou, Anbang Zhang, Yuanyuan Shi, Li Liu, Zeheng Wang, Wanjun Chen, Bo Zhang, "3D recessed multi-gate enhanced HEMT and its manufacturing method," P.R.C. Patent, App. No. 201511003565.6.


Education Background

  • 2014.9 -- 2017.6

    Univ. of Elec. Sci. and Tech. of China (UESTC)       IC Engineering       Postgraduate       Master's Degree

  • 2010.9 -- 2014.6

    Univ. of Elec. Sci. and Tech. of China (UESTC)       Microelectronics       Undergraduate       Bachelor of Engineering

Work Experience

  • 2018.9 -- Now

    Univ. of Elec. Sci. and Tech. of China (UESTC)      School of Information and Software Engineering      Research assistant (consultant)      On the job

  • 2017.9 -- 2018.8

    National University of Singapore      Dept. of Elctrical and Computer Engineering      Scientific researcher (PhD programme)      Withdrew

Social Affiliations

  • 2018.1 -- Now

    Invited reviewer of J. of Electronic Materials (SCI-IF1.566, Q3)

  • 2018.1 -- Now

    Invited reviewer of Superlattices and Microstructures (SCI-IF2.099, Q3)

  • 2018.1 -- Now

    Invited reviewer of AEU-Int. J. of Elec. and Comm.

Research Group

现代服务科学计算团队

Research Focus

  • Big date on Traditional Chinese Medine
  • Semiconductor (Si, GaN, and SiC) devices (Power, RF, and LEDs)
  • Modelling and simulation on semiconductor devices