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Paper published (seleted)

SCI-indexed journal papers:

Z. Wang, D. Yang, J. Cao, F. Wang, Y. Yao, A novel technology for turn-on voltage reduction of high-performance lateral heterojunction diode with source-gate shorted anode, Superlattices Microstruct. 125 (2019) 144–150. doi:10.1016/j.spmi.2018.11.003.

Z. Wang, J. Cao, F. Wang, W. Chen, B. Zhang, S. Guo, Y. Yao, Proposal of a novel enhancement type AlGaN/GaN HEMT using recess-free field coupled gate, Superlattices Microstruct. 122 (2018) 343–348. doi:10.1016/j.spmi.2018.07.016.

Z. Wang, J. Cao, R. Sun, F. Wang, Y. Yao, Numerical investigation on AlGaN/GaN short channel HEMT with AlGaN/InGaN/AlGaN quantum well plate, Superlattices Microstruct. 120 (2018) 753–758. doi:10.1016/j.spmi.2018.06.045.

Z. Wang, W. Chen, F. Wang, J. Cao, R. Sun, K. Ren, Y. Luo, S. Guo, Z. Wang, X. Jin, L. Yang, B. Zhang, Simulation study on AlGaN/GaN diode with Γ-shaped anode for ultra-low turn-on voltage, Superlattices Microstruct. 117 (2018) 330–335. doi:10.1016/j.spmi.2018.03.063.

Z. Wang, F. Wang, S. Guo, Z. Wang, Simulation study of high-reverse blocking AlGaN/GaN power rectifier with an integrated lateral composite buffer diode, Micro Nano Lett. 12 (2017) 660–663. doi:10.1049/mnl.2017.0057.

F. Wang, W. Chen, Z. Wang, R. Sun, J. Wei, X. Li, Y. Shi, X. Jin, X. Xu, N. Chen, Q. Zhou, B. Zhang, Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode, Superlattices Microstruct. 105 (2017) 132–138. doi:10.1016/j.spmi.2017.03.029.

Q. Zhou, L. Liu, A. Zhang, B. Chen, Y. Jin, Y. Shi, Z. Wang, W. Chen, B. Zhang, 7.6V threshold voltage high-performance normally-off Al2O3/GaN MOSFET achieved by interface charge engineering, IEEE Electron Device Lett. 37 (2016) 165–168. doi:10.1109/LED.2015.2511026.

Q. Zhou, Z.H. Wang, X.Y. Zhou, A.B. Zhang, Y.Y. Shi, L. Liu, Y.G. Wang, Y.L. Fang, Y.J. Lv, Z.H. Feng, B. Zhang, Physics of dynamic threshold voltage and steep subthreshold swing in Al2O3-InAlN-GaN MOSHEMTs, Semicond. Sci. Technol. 31 (2016). doi:10.1088/0268-1242/31/3/035005.

Z. Wang, B. Zhang, Q. Zhou, Y. Fang, X. Zhou, Y. Shi, Y. Lv, Z. Feng, L. Liu, Y.G. Wang, A. Zhang, Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection, Electron. Lett. 51 (2015) 1889–1891. doi:10.1049/el.2015.2885.

Conference papers(EI-indexed):

Z. Wang, X. Feng, et al, A Novel High Performance Lateral AlGaN/GaN Schottky Barrier Diode Using Highly Effective Field Plate with Polarization Enhanced Channel,  3th Electron Devices Technology and Manufacturing (EDTM) 2019, accpeted.

Y.C. Liang, K. Ren, S.J. Chua, Z. Wang, X. Gong, PS-3-08 High Sensitivity Hall-Effect Sensor on the AlGaN / GaN Fin-HEMT Structure, (2018) 939–940.

R. Zhu, Q. Zhou, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, W. Chen, B. Zhang, High performance normally-off Al2O3/GaN MOSFETs with record high threshold voltage by interface charge engineering, 2016 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol. ICSICT 2016 - Proc. (2017) 1038–1040. doi:10.1109/ICSICT.2016.7998643.

Y. Yang, Q. Zhou, Y. Shi, Z. Wang, L. Liu, K. Hu, R. Zhu, W. Chen, B. Zhang, 0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate, 2016 13th IEEE Int. Conf. Solid-State Integr. Circuit Technol. ICSICT 2016 - Proc. (2017) 1041–1043. doi:10.1109/ICSICT.2016.7998644.

Q. Zhou, A. Zhang, R. Zhu, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, W. Chen, B. Zhang, Threshold Voltage Modulation by Interface Charge Engineering for High Performance Normally-off GaN MOSFETs with High Faulty Turn-on Immunity, in: 2015: pp. 1373–1375.

Other papers (in Chinese):

人才培养视域下理工科院校人文素质教育初探,姚远哲,赵莹,王泽恒等。

中青年脱发的常见根源浅析及对症治疗建议,王泽恒等。



Patents published (seleted)

Wanjun Chen, Zeheng Wang, Li Liu, Guanhao Hu, Jian Li, Qi Zhou and Bo Zhang, "An enhanced HEMT with SBD integrated," P.R.C. Patent, App. No.201510483325.4.

Wanjun Chen, Zeheng Wang, Yajie Xin, Guanhao Hu, Yijun Shi, Qi Zhou and Bo Zhang, "A HEMT," P.R.C. Patent, App. No. 201610650111.6.

Qi Zhou, Jian Li, Zeheng Wang, Yuanyuan Shi, Anbang Zhang, Li Liu, Bo Zhang, "A GaN heterojunction power diode with grid control structure," P.R.C. Patent, App. No. 2015104561955.

Wanjun Chen, Yijun Shi, Zeheng Wang, Guanhao Hu, Li Liu, Qi Zhou, Bo Zhang, "An enhanced HEMT device," P.R.C. Patent, App. No. 201510713864.2.

Qi Zhou, Guanhao Hu, Yang Jin, Bowen Chen, Zeheng Wang, Li Liu, Wanjun Chen, Bo Zhang, "A method of threshold voltage modulation for enhanced III-nitride semiconductor device," P.R.C. Patent, App. No. 201511026317.3.

Qi Zhou, Anbang Zhang, Yuanyuan Shi, Li Liu, Zeheng Wang, Wanjun Chen, Bo Zhang, "3D recessed multi-gate enhanced HEMT and its manufacturing method," P.R.C. Patent, App. No. 201511003565.6.


  • Education Background
  • Work Experience
2014-9 | 2017-6
  • Univ. of Elec. Sci. and Tech. of China (UESTC)
  • IC Engineering
  • Postgraduate
  • Master's Degree

2010-9 | 2014-6
  • Univ. of Elec. Sci. and Tech. of China (UESTC)
  • Microelectronics
  • Undergraduate
  • Bachelor of Engineering

  • Social Affiliations
  • Research Focus
2018-1
Now
  • Invited reviewer of AEU-Int. J. of Elec. and Comm.

2018-1
Now
  • Invited reviewer of Superlattices and Microstructures (SCI-IF2.099, Q3)

2018-1
Now
  • Invited reviewer of J. of Electronic Materials (SCI-IF1.566, Q3)

2018-12
Now
  • Invited reviewer of Micro & Nano Letters (SCI-IF0.841, Q3)

Personal information


Gender : Male

Alma Mater : Univ. of Elec. Sci. and Tech. of China (UESTC)

Education Level : With Certificate of Graduation for Study as Master's Candidates

Degree : Master's Degree

Status : On the job

School/Department : School of Information and Software Engineering

Date of Employment : 2018-09-01

Discipline : Computer Systems Organization Microelectronics and Solid State Electronics Electronics and Information

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