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    游飞

    • 教授 博士生导师
    • 性别:男
    • 毕业院校:电子科技大学
    • 学历:博士研究生毕业
    • 学位:工学博士学位
    • 在职信息:在岗
    • 所在单位:电子科学与工程学院
    • 办公地点:电子科技大学清水河校区四号科研楼A区513
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    Congratulations!

      
    发布时间:2017-07-26   点击次数:

    祝贺雷奇与董磊同学,你们的辛勤付出已经得到足够的证明,进步的空间仍然很广阔,再接再砺!

    刚刚结束的IMS 2011 “High Efficiency Power Amplifier Student Design Competition”捷报传来,两位同学的两组功放在竞赛中分获第7与第9的好成绩,实测结果证明了团队在高效率功放设计与验证方面的能力。

    今年的IMS 2011 在Baltimore USA举行,该会议是IEEE MTT-S组织下的标杆会议,均在美国本土召开,是微波领域的国际最高水平会议之一。IMS每年举行的学生竞赛,汇聚了世界相关方向的优秀学术团队的研究生。高效率功率放大器设计竞赛每年都会举行,指标不断刷新,能够在该竞赛中得到排名,实属不易。今年参与的主要大学有:Pohang University of Science and Technology(Korea),RWTH Aachen University (Germany),Purdue University (USA),University of Quebec in Rimouski (USA),University of Ferrara (Italy),UESTC (China)。

    竞赛详情网址:http://ims2011.org/Technical_Program/Student_Competitions/Student_Design_Competition_1.html

    具体排名及得分情况

    The results of the PA Competition are:

    #    Name    Affiliation    Score    

    1    Junghwan Moon and Juyeon Lee    Pohang University of Science and Technology (POSTECH),    109.16    

    2    Junghwan Moon and Juyeon Lee    Pohang University of Science and Technology (POSTECH), Republic of Korea    108.31    

    3    Sergej Werner, Dimitri Pozdniakov, Danish Kalim    UMIC Research Center, RWTH Aachen University, Aachen, Germany    103.76    

    4    Kenle Chen    School of Electrical and Computer Engineering, Purdue University, USA    103.31    

    5    Kenle Chen    School of Electrical and Computer Engineering, Purdue University, USA    102.05    

    6    Zhebin Wang, Shengjie Gao, Fathi Nasri    University of Quebec in Rimouski, department of Electrical Engineering    91.32    

    7    Qi Lei, Lei Dong, Zhebin Hu, Weixing Zhao, Bing Du,Xuan Ding,Shuyi Xie    UESTC (University of Electronic Science and Technology of China)    87.61    

    8    Sergio Di Falco    University of Ferrara, Via Saragat 1, 44122 Ferrara, Italy    85.36    

    9    Qi Lei, Lei Dong, Zhebin Hu, Weixing Zhao, Bing Du,Xuan Ding,Shuyi Xie    UESTC (University of Electronic Science and Technology of China)    83.63    

    10    Olaf Ismael Gómez Pichardo    CINVESTAV-IPN Guadalajara, Jalisco, Mexico    54.87    

    比赛简介

    MTT-5 (High Power Amplifier Components) is pleased to announce the Seventh High Effi ciency Power Amplifier Competition, which will take place at the 2011 IEEE MTT-S International Microwave Symposium (IMS).

    This competition is open to all students and graduate students registered at an educational establishment. The competitors are required to design, construct, and measure a high effi ciency power amplifer at a frequency of their choice above 1 GHz but less than 20 GHz, and having an output power level of at least 5 watts but less than 100 watts. The winner will be judged on the design, which demonstrates the highest power added effi ciency (PAE). A representive of the design group must be present at the testing to assist with the evaluation. The winner will receive a prize of $1,000, and will be invited to submit a paper describing the design for the MTT Microwaves Magazine. Modelithics and AWR will also give software awards to the top 3 PA teams.

    PA Competition Rules:

    The power amplifier (PA) design may use any type of technology, but must be the result of student effort both in the amplifier design and fabrication.

    The PA mechanical design should allow for internal inspection of all relevant components and circuit elements. The RF ports should be SMA female connectors. Bias connections should be banana plugs. Only two DC power sources are allowed.

    The PA must operate at a frequency of greater than 1 GHz but less then 20 GHz, and have an output power level of at least 5 watts but less than 100 watts.

    All amplifiers should require less than 25 dBm of input power to reach the output level required for maximum effi ciency.

    Amplifier entries should be submitted with measured data, including dc supply requirements, frequency, RF drive and output power, and PAE. PAE will be defined as (RFout-RFin)/dc. Measurements will be under CW operation at room ambient conditions into a 50 ohm load. Only the power at the fundamental CW frequency will be included in the measurement of output power.

    The winner will be based on the amplifier’s PAE measured during o fficial testing, multiplied by a frequency weighting factor having the form (GHz)1/4. Award certificates will be presented at the Student Award Luncheon. The decision of the judges will be final.

    Contestants must notify the MTT-S committee by e-mailing to Dr. Kiki lkossi of their intention to compete in the contest before April 1, 2011. This notification should include information on the University or educational affi liation of the entry, and the PA’s approximate power level, dc voltage requirements and frequency of operation. Dr. lkossi can also provide assistance in obtaining device samples.