Doctor of Engineering

With Certificate of Graduation for Doctorate Study

Recommended Ph.D.Supervisor

Personal Information

Gender:Male
Date of Employment:2021-06-09
E-Mail:

VIEW MORE

Other Contact Information


Home > Scientific Research > Paper Publications

New Opportunities for High‐Performance Source‐Gated Transistors Using Unconventional Materials

Hits:

Journal:Advanced Science
Volume:8
Page Number:2101473
Translation or Not:no

Pre One:Flexible complementary circuits operating at sub-0.5 V via hybrid organic-inorganic electrolyte-gated transistors

Next One:Organic circuits reach new heights

Address: Shahe Campus:No.4, Section 2, North Jianshe Road, 610054  |  Qingshuihe Campus:No.2006, Xiyuan Ave, West Hi-Tech Zone, 611731  |   Chengdu, Sichuan, P.R.China © 2010 University of Electronic Science and Technology of China. All Rights Reserved

Click:  | The Last Update Time:..  | University of Electronic Science and Technology of China