Journal:Scientific Reports
Abstract:The state-of-art Si Matel-Oxide-Semiconductor Field-Effect-Transistor (MOS-FET) meets the problem
of the Power Consumption (PC) can not be effecively deceased guided by the Moore’s Law as before.
The GFET has the problem of the device can not be effectively turned off, since the band-gap of the graphene is zero. To solve these problems, noticing the amount of the carriers in the 2 dementional semiconductor material is limited, we propose a Matel-Semi-Insulator-Semiconductor Field-Effect- Transistor (MSIS-FET) to replace the traditional MOS-FET. We verify our idea by fabricating the graphene...
Indexed by:期刊论文
Translation or Not:no
Date of Publication:2019-03-06
Associate Professor
Supervisor of Master's Candidates
Gender : Male
Education Level : With Certificate of Graduation for Doctorate Study
Degree : Doctor of Engineering
Status : Professor
Date of Employment : 1999-07-01
Discipline:Microelectronics and Solid State Electronics
Email : 10049f2ecec39b2772b40bd0e537871cbdca7f4e3be4c542f66a58a33a971c30c504d9b05fe02e941ce4694a8b2d8a41e5c6b3c49467aba6cde4f1c39537e3fd98018c3f23962998d7aab91502db5e1fc216748b215e9adb26612190beeb2da4e64e2b62b522173ab5d81e13f0628c4c35db3bcb10594fee326300b0e55bb1d1
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