Liao Yongbo
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Gate extraction and injection field effect transistors and method for controlling its channel carrier amount
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Affilication of Author(s): 电子科技大学

Patent desc: The methods of gate extraction and injection FET and channel carrier quantity control related to microelectronics technology and semiconductor technology. The gate extraction and injection FET of the invention is provided with a source, a drain, a gate...

Application Number: US201916699760A

Service Invention or Not: no

Application Date: 2019-12-02

Publication Date: 2021-10-12

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Associate Professor
Supervisor of Master's Candidates

Gender : Male

Education Level : With Certificate of Graduation for Doctorate Study

Degree : Doctor of Engineering

Status : On the job

Date of Employment : 1999-07-01

Discipline:Microelectronics and Solid State Electronics

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