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Journal:IEEE Transactions on Communications
Abstract:IEEE Trans. Communications
All the Authors:Xuesong Jonathan Tan,S.-Y. R. Li
Indexed by:Unit Twenty Basic Research
Discipline:Engineering
First-Level Discipline:Information and communication engineering
Volume:57
Issue:4
Page Number:940-942
Translation or Not:no
Date of Publication:2009-04-01
Pre One:[27] Jiangfeng Du, Dong Liu, Ziqi Zhao, Zhiyuan Bai, Liang Li, Jianghui Mo and Qi Yu. "Design of High Breakdown Voltage GaN Vertical HFETs with p-GaN Buried Buffer Layers for Power Switching Applications", Superlattices and Microstructures, 83: 251-260 (2015). (SCI)
Next One:[25] Du Jiangfeng, Xu Peng, Wang Kang, et al. "Small Signal Modeling of AlGaN/GaN HEMTs with Consideration of CPW Capacitances", Journal of Semiconductors, 36(3):034009-1, (2015).
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