Large-scale Terahertz Active Arrays in Silicon Using Highly-versatile Electromagnetic Structures

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Affiliation of Author(s):Massachusetts Institute of Technology (MIT)

Journal:2017 IEEE International Electron Devices Meeting (IEDM)

Place of Publication:San Francisco, CA, USA

Key Words:terahertz, large-scale array, radiation, spec troscopy, CMOS, SiGe

Abstract:The high integration capability of silicon technologies, as well as the small wavelength of terahertz (THz) signals, make it possible to build a high-density, very-large-scale active THz array on a single chip. This is, however, very challenging in practice, due to the low device efficiency and large footprint of conventional circuit designs. To address these problems, we introduce a set of compact while versatile circuits, which utilize the multi-mode behaviors from structures with tight device-electromagnetic integration.

Note:https://ieeexplore.ieee.org/document/8268377

All the Authors:Zhi Hu,Guo Zhang,J. Holloway

First Author:Cheng Wang

Indexed by:Conference

Correspondence Author:Ruonan Han

Document Code:10.1109/IEDM.2017.8268377

Discipline:Engineering

First-Level Discipline:Electronic science and technology

Page Number:294-297

Translation or Not:no

Date of Publication:2017-12-02

Date of Publication:2017-12-02