Title of Paper:Total-Ionizing-Dose Radiation Induced Gate Damage in High Voltage P-GaN Gate HEMTs

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Affiliation of Author(s):[1] University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China; [2] Shenzhen Institute of Information Technology, Shenzhen, China; [3] Institute of Electronic and Information Engineering of Uestc in Guangdong, Dongguan, China; [4] Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, China

Journal:Proceedings of the International Symposium on Power Semiconductor Devices and ICs

Key Words:Aluminum gallium nitride - Drain current - Electric fields - Gallium nitride - III-V semiconductors - Ionizing radiation - Irradiation - Leakage currents - Semiconductor alloys

Abstract:TID radiation induced damage in metal/p-GaN/AlGaN/GaN gate stack of p-GaN gate HEMTs is studied and the damage mechanisms highly correlated with electric field are revealed. For on-state bias, irradiation damages related to donor-like traps are located at the reverse-biased metal/p-GaN Schottky junction with high electric field. The depletion region in the Schottky junction would extend, and the trap-assisted tunneling mechanism could be introduced to increase the forward gate current. For off-state bias, irradiation damages are located at the reverse-biased p-GaN/AlGaN/GaN (p-i-n) junction in relation to holes trapped in the AlGaN barrier and the GaN channel. The energy barrier of the AlGaN barrier and the GaN channel would be lowered for electron injection, leading to reverse gate current and off-state drain leakage current increasing. Irradiation induced damage at the Schottky junction may be permanent, while the p-i-n junction damage is recoverable with time. ? 2023 IEEE.

Document Type:Conference article (CA)

Volume:2023-May

Page Number:119-122

ISSN No.:10636854

Translation or Not:no