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- 出生日期：1983-09-02
- 电子邮箱：zhaowang92@uestc.edu.cn
- 入职时间：2018-06-01
- 学历：博士研究生毕业
- 办公地点：清水河科研楼4号C区336房间
- 性别：男
- 学位：哲学博士学位
- 职称：教授
- 博士生导师
- 曾获荣誉：国家青年特聘专家，荣获四川省“天府峨眉计划”、成都市“四派人才”、“蓉漂计划”称号
- 学科：电子科学与技术
物理电子学
Total-Ionizing-Dose Radiation Induced Gate Damage in High Voltage P-GaN Gate HEMTs
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- 所属单位：[1] University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China; [2] Shenzhen Institute of Information Technology, Shenzhen, China; [3] Institute of Electronic and Information Engineering of Uestc in Guangdong, Dongguan, China; [4] Shenzhen Institute for Advanced Study, University of Electronic Science and Technology of China, Shenzhen, China
- 发表刊物：Proceedings of the International Symposium on Power Semiconductor Devices and ICs
- 关键字：Aluminum gallium nitride - Drain current - Electric fields - Gallium nitride - III-V semiconductors - Ionizing radiation - Irradiation - Leakage currents - Semiconductor alloys
- 摘要：TID radiation induced damage in metal/p-GaN/AlGaN/GaN gate stack of p-GaN gate HEMTs is studied and the damage mechanisms highly correlated with electric field are revealed. For on-state bias, irradiation damages related to donor-like traps are located at the reverse-biased metal/p-GaN Schottky junction with high electric field. The depletion region in the Schottky junction would extend, and the trap-assisted tunneling mechanism could be introduced to increase the forward gate current. For off-state bias, irradiation damages are located at the reverse-biased p-GaN/AlGaN/GaN (p-i-n) junction in relation to holes trapped in the AlGaN barrier and the GaN channel. The energy barrier of the AlGaN barrier and the GaN channel would be lowered for electron injection, leading to reverse gate current and off-state drain leakage current increasing. Irradiation induced damage at the Schottky junction may be permanent, while the p-i-n junction damage is recoverable with time. ? 2023 IEEE.
- 文献类型：Conference article (CA)
- 卷号：2023-May
- 页面范围：119-122
- ISSN号：10636854
- 是否译文：否