Affiliation of Author(s):[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 611731, Sichuan, Peoples R China;[2]Dongguan Univ Technol, Sch Elect Engineer & Intelligentizat, Dongguan 523808, Peoples R China;[3]CAEP, Microsyst & Terahertz Res Ctr, Chengdu 610200, Sichuan, Peoples R China
Journal:MATERIALS RESEARCH EXPRESS
Key Words:terahertz spectroscopy; modulators; nano-materials; thin film devices; graphene
Abstract:Graphene field-effect-transistor (GFET) based terahertz (THz) modulators usually possess an unfulfilling modulation depth (MD) of 15% similar to 20%. In this work we developed a flexible GFET based THz modulator, where the graphene monolayer is coated with an organic high-K dielectric as the screening layer and an ion-gel layer as the gate. With this exquisite composite modulating structure, the new device possesses a significantly enhanced modulation depth (MD) up to 70% over a broad frequency band, an extremely low insert loss (IL) of 1.3 dB, and unexpected good structural and properties stability. The large intrinsic MD, low IL, as well as its flexibility, render this performance enhanced modulator versatile in fabrication of novel THz devices, such as multi-level modulator, for nonplanar or wearable applications.
Document Type:Article
Volume:5
Issue:11
ISSN No.:2053-1591
Translation or Not:no