Affiliation of Author(s):[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;[2]Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;[3]Univ Chinese Acad Sci, Beijing 100049, Peoples R China;[4]Univ Elect Sci & Technol China, Natl Key Lab Sci & Technol Commun, Chengdu 610054, Peoples R China
Journal:ADVANCED OPTICAL MATERIALS
Key Words:antireflection effect; enhanced modulation depth; modulators; silicon nanotips; terahertz waves
Abstract:As an attractive applications of terahertz (THz) radiation, imaging with THz technique stands at the focus of current interest. THz spatial modulators are key issue for fast imaging with a single detector. Here, for the first time, the silicon nanotip (SiNT) arrays are reported that can be utilized as antireflection layers for the THz wave to achieve a low-loss and spectrally broadband optical-driven THz modulator. Compared with the modulator fabricated with bare silicon, a 2-3-time larger modulation depth is achieved in SiNT modulator. Moreover, it is found that the intrinsic THz transmission of SiNT is as high as 90%, which is much higher than that of bare silicon. The theoretical simulation results reveal that a strong antireflection effect induced from SiNT layer plays a crucial role in enhancing the properties of modulator. The SiNT-based optical-driven THz modulator with low loss and high modulation depth is promising for potential application to THz imaging.
Document Type:Article
Volume:6
Issue:2
ISSN No.:2195-1071
Translation or Not:no