Doctor of Engineering
With Certificate of Graduation for Doctorate Study
Gender:Male
Date of Employment:2005-04-01
E-Mail:2dfae7fbc3b4eee77cbc83e6dc0991c98a03764bcc68440b36c566a8436e2ae8a1583db720d39738c58ecf51abdfc0792241b0c642189c27038028cf0502664fcf2ad60fb7a8e4099e84c7a18122e783ed3307500b5c9fbe19c3e89a1d71dd219103fa75b78e4c54f92297151d3fe6fc58621daf6a763c7e396f0951bd7581e1
Email:c045ee02cf98f3c8badd036e7bb5177b47f43a3c5e8068fdb1fbaf5b1a2b1c379d52673dfd4418a27d6de7464b5824033fcc7853b02961697e9d54402740773f73b957f231b409a9b1301b36a226460ea4a21a697903124a28bd1e0b5beb7fc196c290c4a3c04f9e1afef461deb669e658a79d928965266b30d2529ad49f5d79
Affiliation of Author(s):[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Peoples R China;[2]Sci Res Co Carat, R&D Inst Mat, Div Crystal Phys & Technol, Lvov, Ukraine
Journal:CHINESE PHYSICS LETTERS
Key Words:Yttrium iron garnet - Crystal orientation - Binary alloys - Saturation magnetization - Epitaxial growth - Lattice mismatch - Single crystals - Ferromagnetic resonance - Iron alloys - Film preparation - Light absorption - Substrates
Abstract:Lu(2.1)Bi(0.9)Fe(5)O(12) (LuBiIG) garnet films are prepared by liquid phase epitaxy (LPE) method on gadolinium gallium garnet (GGG) substrates from lead-free flux. Three-inch single crystal garnet films with (444) orientation and good surface are successfully fabricated. The lattice mismatch to the GGG(111) substrate is as small as 0.08%. The ferromagnetic resonance (FMR) linewidth of the film is 2 Delta H = 2.8-5.1 Oe, the Faraday rotation is 1.64 deg/mu m at 633 nm at room temperature and the optical absorption coefficient of the film is 600 cm(-1) in visible range and about 100-170 cm(-1) when the wavelength is larger than 800 nm. The epitaxy film possesses dominating in-plane magnetization with a saturation magnetization of about 1562G. These superior optical, magnetic-optical (MO) and microwave properties of our garnet films have potential applications in both MO and microwave devices.
Document Type:Article
Volume:26
Issue:4
ISSN No.:0256-307X
Translation or Not:no
CN No.:11-1959/O4
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