Wen Qiye
+
Doctor of Engineering
With Certificate of Graduation for Doctorate Study
Personal Information
Gender:Male
Date of Employment:2005-04-01
E-Mail:
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Doctor of Engineering
With Certificate of Graduation for Doctorate Study
Gender:Male
Date of Employment:2005-04-01
E-Mail:2dfae7fbc3b4eee77cbc83e6dc0991c98a03764bcc68440b36c566a8436e2ae8a1583db720d39738c58ecf51abdfc0792241b0c642189c27038028cf0502664fcf2ad60fb7a8e4099e84c7a18122e783ed3307500b5c9fbe19c3e89a1d71dd219103fa75b78e4c54f92297151d3fe6fc58621daf6a763c7e396f0951bd7581e1
Email:c045ee02cf98f3c8badd036e7bb5177b47f43a3c5e8068fdb1fbaf5b1a2b1c379d52673dfd4418a27d6de7464b5824033fcc7853b02961697e9d54402740773f73b957f231b409a9b1301b36a226460ea4a21a697903124a28bd1e0b5beb7fc196c290c4a3c04f9e1afef461deb669e658a79d928965266b30d2529ad49f5d79
Affiliation of Author(s):[1]Univ Elect Sci & Technol China, Key Lab Elect Film & Integrated Devices, Chengdu 610054, Peoples R China
Journal:RARE METALS
Key Words:ferromagnetic semiconductor junction; I-V characteristic; magnetoresistance; spin injection
Abstract:The combination of ferromagnetic metal (FM) and semiconductor (SC) for spin injection was studied and demonstrated with FM-SC-FM junction. The semiconductor was chosen to be doped Indium-Tin-Oxide (ITO). Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited. The ITO single-layer film was n-type with a small resistance of about 100 Omega/Square. I-V curves and Magnetoresistance (MR) effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K. Results show that the CoFe forms an ohmic contact to ITO film. But at low temperature, the I-V curves show a Schottky-like characteristic, which is strongly affect by applied magnetic field. The MR effect was measured to be 1% at 77 K, which indicates a spin injection into semiconductor to be realized in this sandwich junction.
Document Type:Article; Proceedings Paper
Volume:25
Page Number:536-539
ISSN No.:1001-0521
Translation or Not:no
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