Doctor of Engineering
With Certificate of Graduation for Doctorate Study
Gender:Male
Date of Employment:2005-04-01
E-Mail:2dfae7fbc3b4eee77cbc83e6dc0991c98a03764bcc68440b36c566a8436e2ae8a1583db720d39738c58ecf51abdfc0792241b0c642189c27038028cf0502664fcf2ad60fb7a8e4099e84c7a18122e783ed3307500b5c9fbe19c3e89a1d71dd219103fa75b78e4c54f92297151d3fe6fc58621daf6a763c7e396f0951bd7581e1
Email:c045ee02cf98f3c8badd036e7bb5177b47f43a3c5e8068fdb1fbaf5b1a2b1c379d52673dfd4418a27d6de7464b5824033fcc7853b02961697e9d54402740773f73b957f231b409a9b1301b36a226460ea4a21a697903124a28bd1e0b5beb7fc196c290c4a3c04f9e1afef461deb669e658a79d928965266b30d2529ad49f5d79
Affiliation of Author(s):[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
Journal:Chinese Optics Letters
Key Words:Field effect transistors;Gate dielectrics;Graphene;Graphene transistors;Insertion losses;Polyimides;Reconfigurable hardware;Terahertz waves
Abstract:In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect tran- sistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
Volume:0
Issue:5
Page Number:83-87
ISSN No.:1671-7694
Translation or Not:no
CN No.:31-1890/O3
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