Wen Qiye

Doctor of Engineering

With Certificate of Graduation for Doctorate Study

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Gender:Male
Date of Employment:2005-04-01
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Home > Scientific Research > Paper Publications

Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss

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Affiliation of Author(s):[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
Journal:Chinese Optics Letters
Key Words:Field effect transistors;Gate dielectrics;Graphene;Graphene transistors;Insertion losses;Polyimides;Reconfigurable hardware;Terahertz waves
Abstract:In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect tran- sistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
Volume:0
Issue:5
Page Number:83-87
ISSN No.:1671-7694
Translation or Not:no
CN No.:31-1890/O3