Wen Qiye

Doctor of Engineering

With Certificate of Graduation for Doctorate Study

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Gender:Male
Date of Employment:2005-04-01
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Home > Scientific Research > Paper Publications

Wavelength-drop properties of L-type defects in photonic bandgap structure for the terahertz regime

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Affiliation of Author(s):[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Sichuan, Peoples R China
Journal:OPTICAL AND QUANTUM ELECTRONICS
Key Words:Photonic band gap; L-type defects; Wavelength-drop properties; Terahertz
Abstract:Using the finite difference time domain method, the electromagnetic field distribution of terahertz waves are simulated in photonic band gap structures with different single-defect, line-shaped defects and L-type defects composed of three single-defects. Introducing the photonic band gap structure with difference coordinates single-defects, the resonance frequency and amplitude of the single-defect along the vertical direction of line-shaped defects waveguide have more sensitive than the parallel direction. Introducing the photonic band gap structure with line-shaped defects composed of three defects, the resonant in the endpoint of line-shaped defects have high amplitude and in the middle of line-shaped defects have two resonant frequencies. Introducing the photonic band gap structure with L-type defects composed of three defects, three high-Q resonant frequencies appeared simultaneously in the some monitor coordinates.
Document Type:Article
Volume:41
Issue:3
Page Number:159-168
ISSN No.:0306-8919
Translation or Not:no