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所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;[2]Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;[3]Univ Chinese Acad Sci, Beijing 100049, Peoples R China;[4]Univ Elect Sci & Technol China, Natl Key Lab Sci & Technol Commun, Chengdu 610054, Peoples R China

发表刊物：ADVANCED OPTICAL MATERIALS

关键字：antireflection effect; enhanced modulation depth; modulators; silicon nanotips; terahertz waves

摘要：As an attractive applications of terahertz (THz) radiation, imaging with THz technique stands at the focus of current interest. THz spatial modulators are key issue for fast imaging with a single detector. Here, for the first time, the silicon nanotip (SiNT) arrays are reported that can be utilized as antireflection layers for the THz wave to achieve a low-loss and spectrally broadband optical-driven THz modulator. Compared with the modulator fabricated with bare silicon, a 2-3-time larger modulation depth is achieved in SiNT modulator. Moreover, it is found that the intrinsic THz transmission of SiNT is as high as 90%, which is much higher than that of bare silicon. The theoretical simulation results reveal that a strong antireflection effect induced from SiNT layer plays a crucial role in enhancing the properties of modulator. The SiNT-based optical-driven THz modulator with low loss and high modulation depth is promising for potential application to THz imaging.

文献类型：Article

卷号：6

期号：2

ISSN号：2195-1071

是否译文：否