Terahertz Modulators Based on Silicon Nanotip Array
点击次数：发表时间：2025-05-23
- 所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China;[2]Chinese Acad Sci, Tech Inst Phys & Chem, Key Lab Photochem Convers & Optoelect Mat, Beijing 100190, Peoples R China;[3]Univ Chinese Acad Sci, Beijing 100049, Peoples R China;[4]Univ Elect Sci & Technol China, Natl Key Lab Sci & Technol Commun, Chengdu 610054, Peoples R China
- 发表刊物：ADVANCED OPTICAL MATERIALS
- 关键字：antireflection effect; enhanced modulation depth; modulators; silicon nanotips; terahertz waves
- 摘要：As an attractive applications of terahertz (THz) radiation, imaging with THz technique stands at the focus of current interest. THz spatial modulators are key issue for fast imaging with a single detector. Here, for the first time, the silicon nanotip (SiNT) arrays are reported that can be utilized as antireflection layers for the THz wave to achieve a low-loss and spectrally broadband optical-driven THz modulator. Compared with the modulator fabricated with bare silicon, a 2-3-time larger modulation depth is achieved in SiNT modulator. Moreover, it is found that the intrinsic THz transmission of SiNT is as high as 90%, which is much higher than that of bare silicon. The theoretical simulation results reveal that a strong antireflection effect induced from SiNT layer plays a crucial role in enhancing the properties of modulator. The SiNT-based optical-driven THz modulator with low loss and high modulation depth is promising for potential application to THz imaging.
- 文献类型：Article
- 卷号：6
- 期号：2
- ISSN号：2195-1071
- 是否译文：否
+
论文成果
个人信息
- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
- 电子邮箱：
学术荣誉：
- 2012 当选： 新世纪优秀人才计划
其他联系方式
- 邮箱：