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所属单位：[1]Univ Elect Sci & Technol China, Inst Fundamental & Frontier Sci, Chengdu 610054, Peoples R China;[2]Soochow Univ, Coll Energy, Soochow Inst Energy & Mat Innovat, Suzhou 215006, Peoples R China;[3]Soochow Univ, Key Lab Adv Carbon Mat & Wearable Energy Technol, Suzhou 215006, Peoples R China;[4]Univ Elect Sci & Technol China, Sch Elect Sci & Engn, Chengdu 610054, Peoples R China;[5]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610065, Peoples R China;[6]Univ Elect Sci & Technol China, Sch Mat & Energy, Chengdu 610054, Peoples R China

发表刊物：NANOTECHNOLOGY

关键字：photodetector; near perfect absorber; FDTD

摘要：An ultrathin near-perfect MoSe2 absorber working in the visible regime is demonstrated theoretically and experimentally, and it consists of a MoSe2/Au bi-layer film. The polymer-assisted deposition method is used to synthesize MoSe2 films, which can reduce the roughness and thus improve the film absorption. Simulation results show that the absorption of the absorber with 22 nm MoSe2 reaches to larger than 90% between 628.5 nm and 718 nm with a peak value up to 99.5% at 686 nm. Moreover, the measured absorption also shows near-perfect absorption of this simple absorber. Finally, an ultrathin photodetector is fabricated based on this perfect absorber and shows on/off reproducibility and remarkable photocurrent, which is three orders of magnitude higher than the dark current.

文献类型：Article

卷号：31

期号：22

ISSN号：0957-4484

是否译文：否