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所属单位：[1] State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China; [2] Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, 19716, United States

发表刊物：Nano-Micro Letters

关键字：Aluminum oxide - Phase transitions - Thin films - Vanadium dioxide - Buffer layers - Heterojunctions - Silicon - Alumina

摘要：VO2 thin films were grown on silicon substrates using Al2O3 thin films as the buffer layers. Compared with direct deposition on silicon, VO2 thin films deposited on Al2O3 buffer layers experience a significant improvement in their microstructures and physical properties. By optimizing the growth conditions, the resistance of VO2 thin films can change by four orders of magnitude with a reduced thermal hysteresis of 4 °C at the phase transition temperature. The electrically driven phase transformation was measured in Pt/Si/Al2O3/VO2/Au heterostructures. The introduction of a buffer layer reduces the leakage current and Joule heating during electrically driven phase transitions. The C-V measurement result indicates that the phase transformation of VO2 thin films can be induced by an electrical field. ? The Author(s) 2017.

文献类型：Journal article (JA)

卷号：9

期号：3

ISSN号：23116706

是否译文：否

CN号：31-2103/TB