Characterization of sputtering CoFe-ITO junction for spin injection
点击次数：发表时间：2025-05-23
- 所属单位：[1]Univ Elect Sci & Technol China, Key Lab Elect Film & Integrated Devices, Chengdu 610054, Peoples R China
- 发表刊物：RARE METALS
- 关键字：ferromagnetic semiconductor junction; I-V characteristic; magnetoresistance; spin injection
- 摘要：The combination of ferromagnetic metal (FM) and semiconductor (SC) for spin injection was studied and demonstrated with FM-SC-FM junction. The semiconductor was chosen to be doped Indium-Tin-Oxide (ITO). Both ITO single-layer film and CoFe-ITO-CoFe junction were sputtering deposited. The ITO single-layer film was n-type with a small resistance of about 100 Omega/Square. I-V curves and Magnetoresistance (MR) effect of the CoFe-ITO-CoFe junction were measured at room temperature and 77 K. Results show that the CoFe forms an ohmic contact to ITO film. But at low temperature, the I-V curves show a Schottky-like characteristic, which is strongly affect by applied magnetic field. The MR effect was measured to be 1% at 77 K, which indicates a spin injection into semiconductor to be realized in this sandwich junction.
- 文献类型：Article; Proceedings Paper
- 卷号：25
- 页面范围：536-539
- ISSN号：1001-0521
- 是否译文：否
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- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
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- 2012 当选： 新世纪优秀人才计划
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