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所属单位：[1]Dongguan Univ Technol, Sch Elect Engn & Intelligentizat, Dongguan 523808, Peoples R China;[2]Shenzhen Univ, Coll Phys & Optoelect Engn, Shenzhen 518061, Peoples R China;[3]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

发表刊物：SENSORS

关键字：terahertz; modulator; nanostructure; CST simulation

摘要：Nanostructures can induce light multireflection, enabling strong light absorption and efficient photocarrier generation. In this work, silicon nanostructures, including nanocylinders, nanotips, and nanoholes, were proposed as all-optical broadband THz modulators. The modulation properties of these modulators were simulated and compared with finite element method calculations. It is interesting to note that the light reflectance values from all nanostructure were greatly suppressed, showing values of 26.22%, 21.04%, and 0.63% for nanocylinder, nanohole, and nanotip structures, respectively, at 2 THz. The calculated results show that under 808 nm illumination light, the best modulation performance is achieved in the nanotip modulator, which displays a modulation depth of 91.63% with a pumping power of 60 mW/mm(2) at 2 THz. However, under shorter illumination wavelengths, such as 532 nm, the modulation performance for all modulators deteriorates and the best performance is found with the nanohole-based modulator rather than the nanotip-based one. To further clarify the effects of the nanostructure and wavelength on the THz modulation, a graded index layer model was established and the simulation results were explained. This work may provide a further theoretical guide for the design of optically tunable broadband THz modulators.

文献类型：Article

卷号：20

期号：8

ISSN号：14248220

是否译文：否