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所属单位：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;

发表刊物：Chinese Optics Letters

关键字：Field effect transistors;Gate dielectrics;Graphene;Graphene transistors;Insertion losses;Polyimides;Reconfigurable hardware;Terahertz waves

摘要：In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect tran- sistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.

卷号：0

期号：5

页面范围：83-87

ISSN号：1671-7694

是否译文：否

CN号：31-1890/O3