Graphene field effect transistor-based terahertz modulator with small operating voltage and low insertion loss
点击次数：发表时间：2025-05-23
- 所属单位：[1]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China;
- 发表刊物：Chinese Optics Letters
- 关键字：Field effect transistors;Gate dielectrics;Graphene;Graphene transistors;Insertion losses;Polyimides;Reconfigurable hardware;Terahertz waves
- 摘要：In this work, we report a broadband terahertz wave modulator based on a top-gate graphene field effect tran- sistor with polyimide as the gate dielectric on a PET substrate. The transmission of the terahertz wave is modulated by controlling the Fermi level of graphene via the polyimide as the top-gate dielectric material instead of the traditional dielectric materials. It is found that the terahertz modulator can achieve a modulation depth of ~20.9% with a small operating gate voltage of 3.5 V and a low insertion loss of 2.1 dB.
- 卷号：0
- 期号：5
- 页面范围：83-87
- ISSN号：1671-7694
- 是否译文：否
- CN号：31-1890/O3
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- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
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- 2012 当选： 新世纪优秀人才计划
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