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所属单位：[1]Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA;[2]Hong Kong Univ Sci & Technol, Dept Phys, Hong Kong, Hong Kong, Peoples R China;[3]Univ Elect Sci & Technol China, Shc Microelect & Solid State Elect, Chengdu 610054, Peoples R China

发表刊物：APPLIED PHYSICS LETTERS

摘要：Microwave-assisted magnetization switching was investigated using Fe30Co70/AlOx/Ni80Fe20 magnetic tunnel junctions incorporated with a coplanar waveguide. Coercivity field of Ni80Fe20 layer was dramatically reduced in a small amplitude microwave. The authors eliminated the thermal effect in coercivity reduction by comparing two types of measurements which are with and without spin precession in the presence of microwave. It was found that the coercivity reduction depends on both frequency and power of the microwave. The numerical simulation based on Landau-Lifshitz-Gilbert equation reproduced the trend of the experimental data. The results indicate that microwave can be an efficient means to switch the magnetization of a thin film. (c) 2007 American Institute of Physics.

文献类型：Article

卷号：90

期号：15

ISSN号：0003-6951

是否译文：否