Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator
点击次数：发表时间：2025-05-23
- 所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China
- 发表刊物：ACS APPLIED ELECTRONIC MATERIALS
- 关键字：graphene/silicon hybrid diode; terahertz modulation; gold nanoparticles; modulation mechanism; band theory
- 摘要：Graphene/silicon hybrid diodes have been proven efficient for broadband terahertz (THz) modulation with electrical and optical stimuli. However, the optimal protocol to apply optical and electrical stimuli has not been well-determined to obtain the best performance. Here, band theory of the hybrid diode has been used to analyze the underlying modulation mechanism and to help determine the optimal modulation protocol. Monolayer gold nanoparticles (AuNPs) were coated on the graphene/silicon hybrid diode to enhance the modulation performance. Both high modulation depth (similar to 93%) and modulation rate (similar to 4.6 kHz) were obtained with the AuNP-coated hybrid diode using the proper modulation method. To explore the underlying mechanism for a graphene/silicon hybrid diode THz modulator, this work could throw light on other material systems for THz modulation.
- 文献类型：Article
- 卷号：2
- 期号：7
- 页面范围：1953-1959
- ISSN号：2637-6113
- 是否译文：否
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- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
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- 2012 当选： 新世纪优秀人才计划
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