文岐业

个人信息Personal Information

教授 博士生导师

性别:男

毕业院校:电子科技大学

学历:博士研究生毕业

学位:工学博士学位

在职信息:在职人员

所在单位:电子科学与工程学院

入职时间:2005-04-01

办公地点:电子科技大学5号科研楼

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Mechanism and Optimization of a Graphene/Silicon Hybrid Diode Terahertz Modulator

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所属单位:[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Sichuan, Peoples R China

发表刊物:ACS APPLIED ELECTRONIC MATERIALS

关键字:graphene/silicon hybrid diode; terahertz modulation; gold nanoparticles; modulation mechanism; band theory

摘要:Graphene/silicon hybrid diodes have been proven efficient for broadband terahertz (THz) modulation with electrical and optical stimuli. However, the optimal protocol to apply optical and electrical stimuli has not been well-determined to obtain the best performance. Here, band theory of the hybrid diode has been used to analyze the underlying modulation mechanism and to help determine the optimal modulation protocol. Monolayer gold nanoparticles (AuNPs) were coated on the graphene/silicon hybrid diode to enhance the modulation performance. Both high modulation depth (similar to 93%) and modulation rate (similar to 4.6 kHz) were obtained with the AuNP-coated hybrid diode using the proper modulation method. To explore the underlying mechanism for a graphene/silicon hybrid diode THz modulator, this work could throw light on other material systems for THz modulation.

文献类型:Article

卷号:2

期号:7

页面范围:1953-1959

ISSN号:2637-6113

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