文岐业

个人信息Personal Information

教授 博士生导师

性别:男

毕业院校:电子科技大学

学历:博士研究生毕业

学位:工学博士学位

在职信息:在职人员

所在单位:电子科学与工程学院

入职时间:2005-04-01

办公地点:电子科技大学5号科研楼

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An ultrathin MoSe2 photodetector with near-perfect absorption

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所属单位:[1] Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, 610054, China; [2] College of Energy, Soochow Institute for Energy and Materials Innovations, Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, China; [3] School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu, 610054, China; [4] State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610065, China; [5] School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 610054, China

发表刊物:Nanotechnology

关键字:Polymer films - Photodetectors - Photons - Molybdenum compounds

摘要:An ultrathin near-perfect MoSe2 absorber working in the visible regime is demonstrated theoretically and experimentally, and it consists of a MoSe2/Au bi-layer film. The polymer-assisted deposition method is used to synthesize MoSe2 films, which can reduce the roughness and thus improve the film absorption. Simulation results show that the absorption of the absorber with 22 nm MoSe2 reaches to larger than 90% between 628.5 nm and 718 nm with a peak value up to 99.5% at 686 nm. Moreover, the measured absorption also shows near-perfect absorption of this simple absorber. Finally, an ultrathin photodetector is fabricated based on this perfect absorber and shows on/off reproducibility and remarkable photocurrent, which is three orders of magnitude higher than the dark current. ? 2020 IOP Publishing Ltd.

文献类型:Journal article (JA)

卷号:31

期号:22

ISSN号:09574484

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