Wavelength-drop properties of L-type defects in photonic bandgap structure for the terahertz regime
点击次数：发表时间：2025-05-23
- 所属单位：[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Sichuan, Peoples R China
- 发表刊物：OPTICAL AND QUANTUM ELECTRONICS
- 关键字：Photonic band gap; L-type defects; Wavelength-drop properties; Terahertz
- 摘要：Using the finite difference time domain method, the electromagnetic field distribution of terahertz waves are simulated in photonic band gap structures with different single-defect, line-shaped defects and L-type defects composed of three single-defects. Introducing the photonic band gap structure with difference coordinates single-defects, the resonance frequency and amplitude of the single-defect along the vertical direction of line-shaped defects waveguide have more sensitive than the parallel direction. Introducing the photonic band gap structure with line-shaped defects composed of three defects, the resonant in the endpoint of line-shaped defects have high amplitude and in the middle of line-shaped defects have two resonant frequencies. Introducing the photonic band gap structure with L-type defects composed of three defects, three high-Q resonant frequencies appeared simultaneously in the some monitor coordinates.
- 文献类型：Article
- 卷号：41
- 期号：3
- 页面范围：159-168
- ISSN号：0306-8919
- 是否译文：否
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- 性别：男
- 职称：教授
- 毕业院校：电子科技大学
- 学历：博士研究生毕业
- 学位：工学博士学位
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- 2012 当选： 新世纪优秀人才计划
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