文岐业

个人信息Personal Information

教授 博士生导师

性别:男

毕业院校:电子科技大学

学历:博士研究生毕业

学位:工学博士学位

在职信息:在职人员

所在单位:电子科学与工程学院

入职时间:2005-04-01

办公地点:电子科技大学5号科研楼

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Wavelength-drop properties of L-type defects in photonic bandgap structure for the terahertz regime

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所属单位:[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Film & Integrated Device, Chengdu 610054, Sichuan, Peoples R China

发表刊物:OPTICAL AND QUANTUM ELECTRONICS

关键字:Photonic band gap; L-type defects; Wavelength-drop properties; Terahertz

摘要:Using the finite difference time domain method, the electromagnetic field distribution of terahertz waves are simulated in photonic band gap structures with different single-defect, line-shaped defects and L-type defects composed of three single-defects. Introducing the photonic band gap structure with difference coordinates single-defects, the resonance frequency and amplitude of the single-defect along the vertical direction of line-shaped defects waveguide have more sensitive than the parallel direction. Introducing the photonic band gap structure with line-shaped defects composed of three defects, the resonant in the endpoint of line-shaped defects have high amplitude and in the middle of line-shaped defects have two resonant frequencies. Introducing the photonic band gap structure with L-type defects composed of three defects, three high-Q resonant frequencies appeared simultaneously in the some monitor coordinates.

文献类型:Article

卷号:41

期号:3

页面范围:159-168

ISSN号:0306-8919

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