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所属单位：[1]Univ Elect Sci & Technol China, Sch Integrated Circuit Sci & Engn, State Key Lab Elect Thin Films & Integrated Device, Chengdu 610054, Peoples R China;[2]Gree Elect Appliances Inc Zhuhai, Zhuhai 519000, Peoples R China

发表刊物：IEEE TRANSACTIONS ON ELECTRON DEVICES

关键字：Heavy-ions-induced leakage current (HIILC); power MOSFET; silicon carbide (SiC)

摘要：A comprehensive investigation is conducted to explore the heavy-ions-induced leakage current (HIILC) modes and degradation mechanism in silicon carbide (SiC) MOSFET. The ions used in irradiation experiments had different linear energy transfer (LET) values, which aimed to simulate complex ion conditions in aerospace applications. The distinct HIILC degradation modes of SiC MOSFETs are observed first under heavy ion irradiation with different LET values. Under irradiation with low LET ions, the overall leakage current degradation is dominated by the degradation of the drain current. Conversely, gate current has a higher degradation rate under irradiation with high LET ions. The degradation mechanisms of leakage current are discussed by combining the defect analysis of irradiated samples and simulation results. We propose and verify for the first time that the generation of stacking faults (SFs) in SiC MOSFETs under heavy ion irradiation is the cause of drain current degradation regardless of LET values. Additionally, under high LET ion irradiation, damage caused by a high electric field in the gate oxide is presumed to be attributed to the rapid degradation in gate current. The proposed theory provides a foundation and guidance for reinforcing against HIILC degradation of SiC MOSFET by addressing the process and material characteristics of the SiC.

文献类型：Article

卷号：71

期号：11

页面范围：6573-6580

ISSN号：0018-9383

是否译文：否