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    • III-Nitride compound power device design, fabrication process & characterization technology

    • Low-voltage GaN power devices for ~MHz high-speed & high-efficiency power applications

    • Novel device design for kilo-volts GaN power devices

    • Device stability, reliability characterization and device physics

    • GaN-based power integration and ICs 

    • Novel wide bandgap and ultra-wide bandgap power devices

    • National Natural Science Fund

      "Novel device structure and the threshold voltage modulation mechanism of GaN-on-Si Enhancement-mode power switches" 

    • Guangdong Basic and Applied Basic Research Fund

      "Novel tri-gated hybrid anode power diode based on ultra-thin barrier AlGaN/GaN heterostructure"

    • Sichuan Science and Technology Program

      "Millimeter-wave and power ICs fabrication technologies based on 6-inch compound semiconductor platform"

    • Advanced Research Program

      "GaN-on-Si single-chip ICs"

  • Book chapter-4: 2018 Technology Roadmap for Wide Band Gap Power Electronics. Shunfeng Li, Huaiyu Ye and Qi Zhou China advanced semicondutor industry innovation alliance, Edited by Kuang Sheng, Xinqiang Wang, and Kunshan Yu (2018)

  • Journal Papers(*通讯作者)

    1. [J77] Jiarui Chen, Yuanzhang Su, Chaowu Pan, Weizhe Kuang, Kai Yang, Haochen Wang , Maojun Wang, Bo Zhang, and Qi Zhou*, "The Device Instability of p-GaN Gate HEMTs Induced by Self-Heating Effect Investigated by on-State Drain Current Injection (DCI) Technique," IEEE Transactions on Electron Devices, vol. 69, no. 10, pp. 5496-5502, Oct. 2022. doi: 10.1109/TED.2022.3200301.

    2. [J76] Kuangli Chen, Yuanzhang Su, Jiajia Ruan, Yonglian Cai, Liyang Zhu, Bo Zhang and Qi Zhou*, "A novel E-mode GaN p-MOSFET featuring charge storage layer with high current density," 2022 J. Phys. D: Appl. Phys, 55 444007. doi: 10.1088/1361-6463/ac8eba.

    3. [J75] Liyang Zhu, Qi Zhou*, Kuangli Chen, Wei Gao, Yong Cai, Kai Cheng, Zhaoji Li, and Bo Zhang, "The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure," IEEE Transactions on Electron Devices, vol. 69, no. 9, pp. 4828-4834, Sept. 2022. doi: 10.1109/TED.2022.3188609.

    4. [J74]匡维哲,周 琦,陈佳瑞,杨 凯,张 波,自热效应下 P-GaNHEMT 的阈值漂移机理,电子与封装, 2022, 22 (8): 080401. doi: 10.16257/j.cnki.1681-1070.2022.0805.

    5. [J73] 伍 振,周 琦,潘超武,杨 宁,张 波,重复短路应力下 p-GaN HEMT 器件的阈值电压,电 子与封装, 2022, 22(6): 060401. doi: 10.16257/j.cnki.1681-1070.2022.0610.

    6. [J72] Pengxiang Bai, Qi Zhou*, Peng Huang, Kuangli Chen, Liyang Zhu, Shouyi Wang, Wei Gao, Chunhua Zhou, and Bo Zhang, "A Novel Trench-Gated Vertical GaN Transistor With Dual-Current-Aperture by Electric-Field Engineering for High Breakdown Voltage," IEEE Transactions on Electron Devices, vol. 69, no. 3, pp. 1219-1225, March 2022. doi: 10.1109/TED.2022.3146110.

    7. [J71] Shouyi Wang, Qi Zhou*, Kuangli Chen, Pengxiang Bai, Jinghai Wang, Liyang Zhu, Chunhua Zhou*, Wei Gao and Bo Zhang, "Simulation Study of the Use of AlGaN/GaN Ultra-Thin-Barrier HEMTs with Hybrid Gates for Achieving a Wide Threshold Voltage Modulation Range," Materials 2022, 15, 654. https://doi.org/10.3390/ma15020654.

    8. [J70] Fangzhou Wang, Wanjun Chen, Xiaorui Xu, Ruize Sun, Zeheng Wang, Yun Xia, Yajie Xin, Chao Liu, Qi Zhou, "Simulation Study of an Ultralow Switching Loss p-GaN Gate HEMT With Dynamic Charge Storage Mechanism," IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 175-183, Jan. 2021. doi: 10.1109/TED.2020.3036325.

    9. [J69] Xiaorui Xu, Wanjun Chen, Shuyi Zhang, Qi Zhou, Zhaoji Li, Bo Zhang, "Design of an Isolated Circuit Breaker With Robust Interruption Capability for DC Microgrid Protection," IEEE Transactions on Industrial Electronics, vol. 68, no. 12, pp. 12408-12417, Dec. 2021. doi: 10.1109/TIE.2020.3039210.

    10. [J68] Kuangli Chen, Qi Zhou*, Liyang Zhu, Zhiwen Dong, Peng Huang, Chao Deng, Yonglian Cai, Wei Gao, Chunhua Zhou, Wanjun Chen, and  Bo Zhang, "A Novel GaN Vertical JFET with Intrinsic Reverse Conduction Capability and Kilo-volts Breakdown Voltage," Semiconductor Science and Technology, vol. 36, 024004, 2020. doi.org/10.1088/1361-6641/abcd15.

    11. [J67] Qi Zhou*, Xiu Yang, Liyang Zhu, Kuangli Chen, Xiaoqi Han, Zhihua Luo, Chunhua Zhou, Wanjun Chen, and Bo Zhang, "Ultrathin barrier AlGaN/GaN hybrid-anode-diode with MOCVD in-situ Si3N4-cap and LPCVD-Si3N4 bilayer passivation stack for dynamic characteristic improvement," IET Electronics Lett., vol. 56, no. 15, pp. 789-791, Jul. 2020. doi: 10.1049/el.2020.0432.

    12. [J66] X. Xu, W. Chen, H. Tao, Q. Zhou, Z. Li and B. Zhang, "Design and Experimental Verification of an Efficient SSCB Based on CS-MCT," IEEE Transactions on Power Electronics, vol. 35, no. 11, pp. 11682-11693, Nov. 2020. doi: 10.1109/TPEL.2020.2987418.

    13. [J65] W. Chen, H. Zuo, Q. Zhou, W. Gao, Y. Xia, C. Liu, H. Tao, Y. Liu, Y. Shi, Y. Xin, K. Zhang, C. Deng, Q. Zhou, X. Deng, Z. Li and B. Zhang, "Non-Simultaneous Triggering Induced Failure of CS-MCT Under Repetitive High-Current Pulse Condition," IEEE Transactions on Device and Materials Reliability, vol. 20, no. 1, pp. 214-220, March. 2020. doi: 10.1109/TDMR.2020.2965980.

    14. [J64] Wang, Fangzhou, Chen, Wanjun, Sun, Ruize,Wang, Zeheng, Zhou, Qi, Zhang, Bo, "An analytical model on the gate control capability in p-GaN gate AlGaN/GaN high-electron-mobility transistors considering buffer acceptor traps," Journal of Physics D: Applied Physics, vol. 54, no. 9, 095107, Dec. 2020. doi.org/10.1088/1361-6463/abc504

    15. [J63] Fangzhou Wang, Wanjun Chen, Xuan Li, Ruize Sun, Xiaorui Xu, Yajie Xin, Zeheng Wang, Yijun Shi, Yun Xia, Chao Liu, Jianjun Zhou, Qi Zhou and Bo Zhang, "Charge storage impact on input capacitance in p-GaN gate AlGaSN/GaN power high-electron-mobility transistors," Journal of Physics D: Applied Physics, vol. 53, no. 30, July 2020. doi: 10.1088/1361-6463/ab86e7.

    16. [J62] Fangzhou Wang, Wanjun Chen, Xiaorui Xu, Ruize Sun, Zeheng Wang, Yun Xia, Yajie Xin, Chao Liu, Qi Zhou, and Bo Zhang, "Simulation Study of An Ultra-Low Switching Loss p-GaN Gate HEMT with Dynamic Charge Storage Mechanism," IEEE Transactions on Electron Devices, vol. 68, no. 1, pp. 175-183, Jan. 2021. doi: 10.1109/TED.2020.3036325.

    17. [J61] Liyang Zhu, Qi Zhou*, Xiu Yang, Jiacheng Lei, Kuangli Chen, Zhihua Luo, Peng Huang, Chunhua Zhou, Kevin J. Chen, and Bo Zhang, "High-Performance Ultrathin-Barrier AlGaN/GaN Hybrid Anode Diode With Al₂O₃ Gate Dielectric and In Situ Si₃N₄-Cap Passivation," IEEE Transactions on Electron Devices, vol. 67, no. 10, pp. 4136-4140, Oct. 2020. doi: 10.1109/TED.2020.3018416.

    18. [J60] Qi Zhou*, Kuangli Chen, Peng Huang, Xiaoqi Han, Wei Xiong,Wanjun Chen, and Bo Zhang, "Tri-Gated Hybrid Anode AlGaN/GaN Power Diode With Intrinsic Low Turn-on Voltage and Ultralow Reverse Leakage Current," IEEE Transactions on Electron Devices, vol. 67, no. 4, pp. 1712-1717, April 2020. doi: 10.1109/TED.2020.2971384.

    19. [J59] Qi Zhou*, Wei Xiong, Xiu Yang, Liyang Zhu, Kuangli Chen, Peng Huang, Xiaoyong Ma, Chunhua Zhou, Wanjun Chen and Bo Zhang, "Ultrathin-Barrier AlGaN/GaN Hybrid-Anode-Diode With Optimized Barrier Thickness for Zero-Bias Microwave Mixer," IEEE Transactions on Electron Devices, vol. 67, no. 3, pp. 828-833, March 2020. doi: 10.1109/TED.2020.2965549.

    20. [J58] Yuanyuan Shi, Qi Zhou*, Qian Cheng, Pengcheng Wei, Liyang Zhu, Dong Wei, Anbang Zhang, Wanjun Chen, Bo Zhang, "Carrier Transport Mechanisms Underlying the Bidirectional  Shift in p-GaN Gate HEMTs Under Forward Gate Stress," IEEE Transactions on Electron Devices, vol. 66, no. 2, pp.876-882, Feb. 2019. doi: 10.1109/TED.2018.2883573.

    21. [J57] Yu Yun, Wei Xiong, Yu Shi, Kuangli Chen, Qi Zhou*, "HAD fabricated on UTB AlGaN/GaN heterostructure for high-sensitivity zero-bias microwave detection,Electronics Letters, vol. 55, no. 24, pp. 1303-1305, Nov. 2019. doi: 10.1049/el.2019.2548.

    22. [J56] C. Liu, W. Chen, R. Sun, Y. Shi, Q. Zhou, Z. Li and B. Zhang, "High Voltage Insulated Gate Trigger Thyristor With High-Efficiency Injection for Fast Turn-on and High Current Pulse," IEEE Electron Device Letters, vol. 40, no. 12, pp. 1965-1968, Dec. 2019. doi: 10.1109/LED.2019.2945335.

    23. [J55] W. Chen, X. Xu, X. Liu, C. Liu, Y. Shi, N. Chen, F. Wang, Y. Wang, K. Zhang, Q. Zhou, Z. Li and B. Zhang, "An Ultralow Loss Insulated Gate Bipolar Transistor With Emitter Dual Injection," IEEE Transactions on Electron Devices, vol. 66, no. 10, pp. 4314-4319, Oct. 2019. doi: 10.1109/TED.2019.2937122.

    24. [J54] Y. Xin, W. Chen, R. Sun, Y. Shi, C. Liu, Y. Xia, F. Wang, M. Li, J. Li, Q. Zhou, X. Deng, T. Chen, Z. Li and B. Zhang, "Analytical Switching Loss Model for GaN-Based Control Switch and Synchronous Rectifier in Low-Voltage Buck Converters," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1485-1495, Sept. 2019. doi: 10.1109/JESTPE.2019.2922389.

    25. [J53] X. Xu, W. Chen, C. Liu, N. Chen, F. Wang, Y. Wang, K. Zhang, Y. Ma, S. Zhang, Q. Zhou, Z. Li and B. Zhang, "A Novel IGBT With Self-Regulated Potential for Extreme Low EMI Noise," IEEE Electron Device Letters, vol. 40, no. 1, pp. 71-74, Jan. 2019. doi: 10.1109/LED.2018.2881741.

    26. [J52] C. Liu, W. Chen, Y. Shi, H. Tao, Q. Zhou, H. Zuo, B. Qiao, Y. Xia, Z. Xiao, W. Gao, N. Chen, X. Xu, Q. Zhou, Z. Li and B. Zhang, "A Novel Insulated Gate Triggered Thyristor With Schottky Barrier for Improved Repetitive Pulse Life and High di/dt Characteristics," IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 1018-1025, Feb. 2019. doi: 10.1109/TED.2018.2887137.

    27. [J51] Qi Zhou*, Peng Huang, Yuanyuan Shi, Kuangli Chen, Dong Wei, Ruopu Zhu, Wanjun Chen ,  and Bo Zhang, "A Novel Kilovolts GaN Vertical Super Junction MOSFET with Trench Gate: Design and Optimization, " IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1440-1448, Sept. 2019. doi: 10.1109/JESTPE.2019.2924333.

    28. [J50] Anbang Zhang, Qi Zhou*, Chao Yang, Yuanyuan Shi, Wanjun Chen, Zhaoji Li, and Bo Zhang, "A variable nanotrench structure for electric field modulation in AlGaN/GaN devices," Japanese Journal of Applied Physics, vol.58, no. SB, 2019. doi: 10.7567/1347-4065/aafe65

    29. [J49] Anbang Zhang, Qi Zhou*, Chao Yang, Yuanyuan Shi, Wanjun Chen, Zhaoji Li and Bo Zhang, "A High-Accuracy AlGaN/GaN Reverse Blocking CRD (RB-CRD) with Hybrid Trench Cathode," Nanoscale Research Letters, vol.14, 2019. doi: 10.1186/s11671-019-2860-y

    30. [J48] Yijun Shi, Wanjun Chen, Shan Wu, Chao Liu, Yun Xia, Maolin Li, Xingtao Cui, Tangsheng Chen, Qi Zhou, Xiaochuan Deng, Bo Zhang, "A novel GaN-based lateral SBD with a TUG-AlGaN/GaN heterojunction," Superlattices and Microstructures, vol. 126, pp.174-180, Feb.2019. doi: 10.1016/j.spmi.2019.01.002.

    31. [J47] Yuanyuan Shi, Qi Zhou*, Qian Cheng, Pengcheng Wei, Liyang Zhu, Dong Wei, Anbang Zhang , Wanjun Chen , and Bo Zhang, "Carrier Transport Mechanisms Underlying the Bidirectional  Vth Shift in p-GaN Gate HEMTs Under Forward Gate Stress," IEEE Transactions on Electron Devices, vol. 66, no. 2, pp. 876-882, Feb. 2019. doi: 10.1109/TED.2018.2883573.

    32. [J46] Ruopu Zhu, Qi Zhou*, Hong Tao, Yi Yang, Kai Hu, Dong Wei, Liyang Zhu, Yuanyuan Shi, Wanjun Chen, and Bo Zhang, "Vertical GaN Power Transistor With Intrinsic Reverse Conduction and Low Gate Charge for High-Performance Power Conversion, " IEEE Journal of Emerging & Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1449-1455, Sept. 2019. doi: 10.1109/JESTPE.2019.2903828.

    33. [J45] Qi Zhou, Peng Huang, Yuanyuan Shi, Kuangli Chen, Dong Wei, Ruopu Zhu, Wanjun Chen, Bo Zhang, "A Novel Kilovolts GaN Vertical Superjunction MOSFET With Trench Gate: Approach for Device Design and Optimization," IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp. 1440-1448, Sept. 2019. doi: 10.1109/JESTPE.2019.2924333

    34. [J44] W. Chen , H. Tao, C. Liu, Y. Xia,  Y. Shi, Y. Liu, C. Liu, J. Liu, Q. Zhou, Z. Li and B. Zhang, "Evaluation of CS-MCT in DC Solid-State Circuit Breaker Applications," IEEE Transactions on Industry Applications, vol. 54, no. 5, pp. 5465-5473, Sept. 2018. doi: 10.1109/TIA.2018.2821092.

    35. [J43] Tao Chen, Qi Zhou*, Dong Wei, Changxu Dong, Wanjun Chen, and Bo Zhang, "Physics-Based 2-D Analytical Model for Field-Plate Engineering of AlGaN/GaN Power HFET," IEEE Transactions on Electron Devices,vol. 66, no. 1, pp. 116-125, Jane 2019. doi: 10.1109/TED.2018.2873810.

    36. [J42] Jinhan Zhang, Xuanwu Kang, Xinhua Wang, Sen Huang, Chen Chen, Ke Wei, Yingkui Zheng, Qi Zhou, Wanjun Chen , Bo Zhang, and Xinyu Liu, "Ultralow-Contact-Resistance Au-Free Ohmic Contacts With Low Annealing Temperature on AlGaN/GaN Heterostructures," IEEE Electron Device Letters, vol. 39, no. 6, pp. 847-850, Jun. 2018. doi: 10.1109/LED.2018.2822659.

    37. [J41] Yijun Shi, Wanjun Chen, Fangzhou, Wang Jie Liu, Xingtao Cui, Guanhao Hu, Chao Liu,Zhaoji Li, Qi Zhou, Bo Zhang, "A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch," Journal of Computational Electronics, vol.17, no.1, pp.238-245, Mar. 2018. doi: 10.1007/s10825-017-1079-3.

    38. [J40] Wei Gao, Changxu Dong, Qi Zhou*, Kai Hu, Yuanyuan Shi, Dong Wei, Liyang Zhu, Anbang Zhang, Yu Shi, Qian Cheng, Wanjun Chen, Bo Zhang, "A novel AlGaN/GaN hybrid-anode current regulating diode (CRD) with step-graded Schottky-Ohmic cathode," Superlattices and Microstructures,vol. 23, pp.52-59, Nov. 2018. doi: 10.1016/j.spmi.2018.01.002.

    39. [J39] Yijun Shi, Wanjun Chen, Chao Liu, Xingtao Cui, Maoling Li, Yun Xia, Yajie Xin, Qi Zhou, Xiaochuan Deng, Bo Zhang, Zhaoji Li, "Investigation on the device geometry-dependent reverse recovery characteristic of AlGaN/GaN lateral field-effect rectifier (L-FER), " Superlattices and Microstructures,vol.120, pp.605-610, Aug.2018. doi: 10.1016/j.spmi.2018.06.020.

    40. [J38] Qi Zhou*, Dong Wei, Xin Peng, Ruopu Zhu, Changxu Dong, Peng Huang, Pengcheng Wei, Wei Xiong, Xiaoyong Ma, Zhiwen Dong, Xiu Yang, Wanjun Chen, Bo Zhang, "A Novel Enhancement-Mode GaN Vertical MOSFET with Double Hetero-Junction for Threshold Voltage Modulation," Superlattices and Microstructures, vol,123, pp 297-305, Nov. 2018. doi: 10.1016/j.spmi.2018.09.010

    41. [J37] Anbang Zhang , Qi Zhou*, Yuanyuan Shi, Chao Yang , Yijun Shi, Yi Yang, Liyang Zhu, Wanjun Chen, Zhaoji Li, and Bo Zhang, " AlGaN/GaN Lateral CRDs With Hybrid Trench Cathodes," IEEE Transactions on Electron Devices, vol. 65, no. 6, pp. 2660-2665, June 2018. doi: 10.1109/TED.2018.2822834.

    42. [J36] Yijun Shi, Wanjun Chen, Xingtao Cui, Maoling Li, Chao Liu, Yun Xia, Jia Li, Fangzhou Wang, Yajie Xin, Qi Zhou, Xiaochuan Deng, Zhaoji Li, and Bo Zhang, "Investigation on the Long-Term Reliability of High-Voltage p-GaN HEMT by Repetitively Transient Overcurrent, " IEEE Transactions on Electron Devices, vol. 65, no. 12, pp. 5322-5328, Dec. 2018. doi: 10.1109/TED.2018.2873802.

    43. [J35] Qi Zhou*, Dong Wei, Ruopu Zhu, Changxu Dong, Peng Huang, Anbang Zhang, Yuanyuan Shi, Liyang Zhu, Yu Shi, Qian Cheng, Cao Deng, Wanjun Chen, Bo Zhang, "Enhancement-mode AlGaN/GaN HFET with buried-junction-barrier for breakdown improvement and threshold-voltage modulation, " Superlattices and Microstructures, vol. 122, pp. 85-92, Oct. 2018. doi: 10.1016/j.spmi.2018.08.018

    44. [J34] W. Chen, H. Tao, L. Lou, C. Liu, W. Cheng, X. Tang, H. Liu, Q. Zhou, X. Deng, Z. Li and B. Zhang, "Low Loss Insulated Gate Bipolar Transistor With Electron Injection (EI-IGBT)," IEEE Journal of the Electron Devices Society, vol. 5, no. 4, pp. 275-282, July 2017. doi: 10.1109/JEDS.2017.2701791.

    45. [J33] Xiaorui Xu, Wanjun Chen, Chao Liu, Nan Chen, Hong Tao, Yijun Shi, Yinchang Ma, Qi Zhou, and Bo Zhang, "Gate field plate IGBT with trench accumulation layer for extreme injection enhancement," Superlattices and Microstructures , vol. 104, pp. 54-62, April 2017. doi: 10.1016/j.spmi.2017.01.046.

    46. [J32] Fangzhou Wang, Wanjun Chen, Zeheng Wang, Ruize Sun, Jin Wei, Xuan Li, Yijun Shi, Xiaosheng Jin, Xiaorui Xu, Nan Chen, Qi Zhou, Bo Zhang, "Simulation design of uniform low turn-on voltage and high reverse blocking AlGaN/GaN power field effect rectifier with trench heterojunction anode, " Superlattices and Microstructures, vol. 105, pp. 132-138, May 2017. doi: 10.1016/j.spmi.2017.03.029

    47. [J31] W. Chen, C. Liu, Y. Shi, Y. Liu, H. Tao, C. Liu, Q. Zhou, Z. Li and B. Zhang, "Design and Characterization of High di/dt CS-MCT for Pulse Power Applications," IEEE Transactions on Electron Devices, vol. 64, no. 10, pp. 4206-4212, Oct. 2017. doi: 10.1109/TED.2017.2736529.

    48. [J30] Qi Zhou*,Yu Shi, Changxu Dong, Liyang Zhu, Dong Wei, Xiaosen Liu, Wanjun Chen, and Bo Zhang. "A Lateral AlGaN/GaN Diode with MIS-Gated Hybrid Anode for Ultra-Low Turn-On and High Breakdown Voltage," Ecs Journal of Solid State Science & Technology, vol. 6,no. 11, pp. S3056-S3059, 2017. doi: 10.1149/2.0141711jss.

    49. [J29] Ronghui Hao, Weiyi Li, Kai Fu, Guohao Yu, Liang Song, Jie Yuan, Junshuai Li, Xuguang Deng, Xiaodong Zhang, Qi Zhou, Yaming Fan, Wenhua Shi, Yong Cai, Xinping Zhang, and Baoshun Zhang, "Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs," IEEE Electron Device Letters, vol. 38, no. 11, pp. 1567-1570, Nov. 2017. doi: 10.1109/LED.2017.2749678.

    50. [J28] Yuanyuan Shi, Qi Zhou*, Anbang Zhang, Liyang Zhu, Yu Shi, Wanjun Chen, Zhaoji Li and Bo Zhang, "Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device," Nanoscale Research Letters, vol. 12, 2017. doi: 10.1186/s11671-017-2111-z.

    51. [J27] Yijun Shi, Wanjun Chen, Qi Zhou, Bo Zhang, "A non-Ohmic normally-off GaN monolithic bidirectional switch with MIS field effect schottky tunnel junction," Superlattices and Microstructures, vol. 109, pp. 414-422, Sept. 2017. doi: 10.1016/j.spmi.2017.04.050

    52. [J26] Qi Zhou*, Yi Yang, Kai Hu, Ruopu Zhu, Wanjun Chen, and Bo Zhang, "Device Technologies of GaN-on-Si for Power Electronics: Enhancement-Mode Hybrid MOS-HFET and Lateral Diode, " IEEE Transactions on Industrial Electronics, vol. 64, no. 11, pp. 8971-8979, Nov. 2017. doi: 10.1109/TIE.2017.2652373.

    53. [J25] W. Chen, C. Liu, X. Tang, L. Lou, W. Cheng, Q. Zhou, Z. Li and B. Zhang, "High Peak Current MOS Gate-Triggered Thyristor With Fast Turn-On Characteristics for Solid-State Closing Switch Applications,"IEEE Electron Device Letters, vol. 37, no. 2, pp. 205-208, Feb. 2016. doi: 10.1109/LED.2015.2511182.

    54. [J24] Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Hushan Cui, Junfeng Li, ChaoZhao, Xinyu Liu, Jinhan Zhang, Qi Zhou, Wanjun Chen, Bo Zhang, and Lifang Jia,"Investigation of the interface between LPCVD-SiNx gate dielectric and III-nitride for AlGaN/GaN MIS-HEMTs," Journal of Vacuum Science & Technology B, vol. 34, no. 4, 2016. doi: 10.1116/1.4944662

    55. [J23] Qi Zhou*, Li Liu, Anbang Zhang, Bowen Chen, Yang Jin, Yuanyuan Shi, Zeheng Wang, Wanjun Chen, and Bo Zhang, "7.6 V Threshold Voltage High-Performance Normally-Off Al2O3/GaN MOSFET Achieved by Interface Charge Engineering," IEEE Electron Device Letters, vol. 37, no. 2, pp. 165-168, Feb. 2016. doi: 10.1109/LED.2015.2511026. (Highlighted by "Semiconductor Today")

    56. [J22] Q Zhou*, Z H Wang, X Y Zhou, A B Zhang, Y Y Shi, L Liu1, Y G Wang, Y L Fang, Y J Lv, Z H Feng and B Zhang, "Physics of dynamic threshold voltage and steep subthreshold swing in Al2O3–InAlN–GaN MOSHEMTs,"Semiconductor Science and Technology, vol. 31, no. 3, Jane 2016. doi: 10.1088/0268-1242/31/3/035005.

    57. [J21] Yijun Shi, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Haojie Jiang, Junfeng Li, Chao Zhao,Shuiming Li, Yu Zhou, Hongwei Gao, Qian Sun, Hui Yang, Jinhan Zhang, Wanjun Chen, Qi Zhou, Bo Zhang and Xinyu Liu, "Normally OFF GaN-on-Si MIS-HEMTs Fabricated With LPCVD-SiNx Passivation and High-Temperature Gate Recess, " IEEE Transactions on Electron Devices, vol. 63, no. 2, pp. 614-619, Feb. 2016. doi: 10.1109/TED.2015.2510630.

    58. [J20] 胡官昊,陈万军,施宜军,周琦,张波, 基于GaN器件Buck电路死区功耗分析与优化电源学报,2016(4):90-95.

    59. [J19] Yuanyuan Shi, Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen Wei Huang, and Bo Zhang, "Impact of interface traps on switching behavior of normally-OFF AlGaN/GaN MOS-HEMTs," Physica Status Solidi, vol. 13, no. 5-6, pp. 328-331, May 2016.

    60. [J18] Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Yingkui Zheng, Yankui Li, Chao Zhao, Xinyu Liu, Qi Zhou, Wanjun Chen, and Bo Zhang, "Mechanism of Ti/Al/Ti/W Au-free ohmic contacts to AlGaN/GaN heterostructures via pre-ohmic recess etching and low temperature annealing," Applied Physics Letters, vol. 107, no. 26, Dec. 2015. doi: 10.1063/1.4939190.

    61. [J17] Qi Zhou*, Yang Jin, Yuanyuan Shi, Jinyu Mou, Xu Bao, Bowen Chen, and Bo Zhang, "High Reverse Blocking and Low Onset Voltage AlGaN/GaN-on-Si Lateral Power Diode With MIS-Gated Hybrid Anode, " IEEE Electron Device Letters, vol. 36, no. 7, pp. 660-662, July 2015. doi: 10.1109/LED.2015.2432171. (Highlighted by "Semiconductor Today")

    62. [J16] Qi Zhou*, Li Liu, XingyeZhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Yuan Gang Wang, Yulong Fang, Yuanjie Lv, Zhihong Feng and Bo Zhang, "Lateral AlGaN/GaN diode with MIS-gated hybrid anode for high-sensitivity zero-bias microwave detection, " Electronics Letters, vol. 51, no. 23, pp. 1889-1891, Nov. 2015. doi: 10.1049/el.2015.2885.

    63. [J15] Qi Zhou*, Bowen Chen, Yang Jin, Sen Huang, Ke Wei,Xinyu Liu, Xu Bao, Jinyu Mou, and Bo Zhang, "High-Performance Enhancement-Mode Al2O3 /AlGaN/GaN-on-Si MISFETs With 626 MW/ Figure of Merit, " IEEE Transactions on Electron Devices, vol. 62, no. 3, pp. 776-781, March 2015. doi: 10.1109/TED.2014.2385062.

    64. [J14] Qi Zhou*, Shu Yang, Wanjun Chen, Bo Zhang, Zhihong Feng, Shujun Cai, Kevin J. Chen, "High voltage InAlN/GaN HEMTs with nonalloyed Source/Drain for RF power applications," Solid State Electronics, vol. 91, pp.19-23, 2014. doi: 10.1016/j.sse.2013.09.006

    65. [J13] 蔡金勇, 周琦, 罗小蓉, 陈万军,范远航, 熊佳云 ,魏杰,杨超,张波, “复合沟道氟离子增强型AlGaN/GaN HEMT的研究,” 固体电子学研究与进展, 2014, 034(005):409-414.

    66. [J12] Qi Zhou*, Wanjun Chen, C Zhou, Bo Zhang, Kevin J. Chen, "High sensitivity AlGaN/GaN lateral field-effect rectifier for zero-bias microwave detection," Electronics Letters vol. 49, no. 22, pp. 1391-1393, Oct. 2013. doi: 10.1049/el.2013.2506.

    67. [J11] Qi Zhou*, Wanjun Chen, Shenghou Liu, Bo Zhang,Zhihong Feng, Shujun Cai, Kevin J. Chen, "Schottky-Contact Technology in InAlN/GaN HEMTs for Breakdown Voltage Improvement," IEEE Transactions on Electron Devices, vol. 60, no. 3, pp. 1075-1081, March 2013. doi: 10.1109/TED.2013.2241439.

    68. [J10] Shu Yang, Sen Huang, Hongwei Chen, Chunhua Zhou, Qi Zhou, Michael Schnee, Qing-Tai Zhao, Jürgen Schubert, Kevin J. Chen, "AlGaN/GaN MISHEMTs With High-k LaLuO3 Gate Dielectric," IEEE Electron Device Letters, vol. 33, no. 7, pp. 979-981, July 2012. doi: 10.1109/LED.2012.2195291.

    69. [J9] Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou, Kevin J. Chen. (2012), "Normallyoff AlGaN/GaN power tunneljunction FETs," Phys. Status Solidi C, vol. 9, no. 3-4, pp. 871-874, March 2012. doi: 10.1002/pssc.201100338.

    70. [J8] Qi Zhou*, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, Kevin J. Chen, "Schottky Source/Drain InAlN/AlN/GaN MISHEMT With Enhanced Breakdown Voltage," IEEE Electron Device Letters, vol. 33, no. 1, pp. 38-40, Jan. 2012. doi: 10.1109/LED.2011.2172972.

    71. [J7] Qi Zhou*, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, Kevin J. Chen, "Schottky Source/Drain InAlN/GaN Metal–Insulator–Semiconductor High-Electron-Mobility Transistor with High Breakdown Voltage and Low On-Resistance," Japanese Journal of Applied Physics, vol. 51, no. 4 part 2, April 2012. doi: 10.1143/JJAP.51.04DF02.

    72. [J6] 周琦, 陈万军,张波,“硅基GaN功率半导体技术,电力电子技术46.12(2012):22-33.doi:10.3969/j.issn.1000-100X.2012.12.005

    73. [J5] Li Yuan, Hongwei Chen, Qi Zhou, Chunhua Zhou, Kevin J. Chen, "Gate-Induced Schottky Barrier Lowering Effect in AlGaN/GaN Metal–2DEG Tunnel Junction Field Effect Transistor," IEEE Electron Device Letters, vol. 32, no. 9, pp. 1221-1223, Sept. 2011. doi: 10.1109/LED.2011.2159258.

    74. [J4] Qi Zhou, King-Yuen Wong, Wanjun Chen, Kevin J. Chen, "Wide-Dynamic-Range Zero-Bias Microwave Detector Using AlGaN/GaN Heterojunction Field-Effect Diode," IEEE Microwave and Wireless Components Letters, vol. 20, no. 5, pp. 277-279, May 2010. doi: 10.1109/LMWC.2010.2045591.

    75. [J3] King-Yuen Wong, Wanjun Chen, Qi Zhou, Kevin J. Chen, "Zero-Bias Mixer Based on AlGaN/GaN Lateral Field-Effect Diodes for High-Temperature Wireless Sensor and RFID Applications," IEEE Transactions on Electron Devices, vol. 56, no. 12, pp. 2888-2894, Dec. 2009. doi: 10.1109/TED.2009.2032279.

    76. [J2] SJ Li, Qi Zhou, YJ Xie, ZY Lei. "Theoretical and Experimental Investigation on PCB Helix Antenna," Journal of Electromagnetic Waves & Applications. Vol. 21, no. 7, pp. 877-887, 2007. doi: doi.org/10.1163/156939307780748977.

    77. [J1] Qi Zhou*, Zhen-ya Lei, Peng Wang, Yong-jun Xie, Min Xiang, Min He, "An Accurate Mutual Coupling Calculation For Microstrip Antennas For Impedance Mismatching," 2006 7th  International Symposium on Antennas, Propagation & EM Theory, Guilin, pp.199-202, 2006. doi: 10.1109/ISAPE.2006.353393.

     



    Conference Papers(*通讯作者)

    1. [C46] Wenjuan Mei, Yuanzhang Su, Zhen Liu, Zhitong Zhao, Chaowu Pan and Qi Zhou, "Mixture Test Optimization for Analog System," 2022 Global Reliability and Prognostics and Health Management (PHM-Yantai), Yantai, China, 2022, pp. 1-7. doi: 10.1109/PHM-Yantai55411.2022.9941953.

    2. [C45] Xin Ming, Zikai Ye, Zhiyi Lin, Yao Qin, Qi Zhou and Bo Zhang, "A Fully-integrated GaN Driver for Time-of-flight Lidar Applications," 2022 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vancouver, Canada, 2022, pp. 169-172. doi: 10.1109/ISPSD49238.2022.9813668.

    3. [C44] Chaowu Pan, Qi Zhou*, Z. Wu, N. Yang, P. Bai, L. Zhu, K. Chen, W. Mei, C. Zhou, X. Ming and B. Zhang, "Physical Mechanism of Device Degradation & its Recovery Dynamics of p-GaN Gate HEMTs Under Repetitive Short Circuit Stress," 2022 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD),  Vancouver, Canada, 2022,  pp.  313-316. doi: 10.1109/ISPSD49238.2022.9813685.(Selected for oral presentation on GaN power devices of China mainland )

    4. [C43] Jingyu Xie , Qi Zhou*, Xiaoqi Han , Pengxiang Bai , Chunhua Zhou , Wei Gao , Bo Zhang, "The Self-heating Effect of 650 V GaN HEMT in 200 V-48 V Half-Bridge Buck Converter and its Impact on the Power Performance of the Circuit," 2021 中国电源学会第二十四届学术年会论文集,入选大会最佳论文

    5. [C42] Shuyi Zhang, Wanjun Chen, Xiaorui Xu, Chao Liu, Nan Chen, Qi Zhou, Bo Zhang, "A Dual Hole Barriers IGBT with High dV/dt Controllability and Extreme Low EMI Noise," 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 2021, pp. 1-3. doi: 10.1109/EDTM50988.2021.9420974.

    6. [C41] Xin Ming, Xiang-jun Li, Zhi-wen Zhang, Yao Qin, Qi-fei Xu, Zi-wei Fan, Yuan-yuan Liu, Xu-dong Feng, Qi Zhou, Zhuo Wang, Bo Zhang , "A GaN HEMT Gate Driver IC with Programmable Turn-on dV/dt Control," 2020 32nd  International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 98-101. doi: 10.1109/ISPSD46842.2020.9170152.

    7. [C40] Yajie Xin, Wanjun Chen, Ruize Sun, Yijun Shi, Chao Liu, Yun Xia, Fangzhou Wang, Xiaorui Xu, Qi Shi, Yuan Wang, Xiaochuan Deng, Qi Zhou, Zhaoji Li, Bo Zhang, "Electrostatic Discharge (ESD) Behavior of p-GaN HEMTs," 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 317-320. doi: 10.1109/ISPSD46842.2020.9170063.

    8. [C39] Xiaorui Xu, Wanjun Chen, Fangzhou Wang, Ruize Sun, Chao Liu, Yun Xia, Yajie Xin, Qi Zhou, Zhaoji Li, Bo Zhang, "An Ultralow Loss N-channel RB-IGBT with P-drift Region," 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Vienna, Austria, 2020, pp. 455-458. doi: 10.1109/ISPSD46842.2020.9170052.

    9. [C38] Anbang Zhang, Qi Zhou*, Chao Yang, Yuanyuan Shi, Changxu Dong, Tong Liu, Yijun Shi, Wanjun, Zhaoji Li, Bo Zhang, "Novel AlGaN/GaN SBDs with nanoscale multi-channel for gradient 2DEG modulation," 2018 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 204-207. doi: 10.1109/ISPSD.2018.8393638.

    10. [C37] Chao Liu, Wanjun Chen, Yijun Shi, Bin Qiao, Qian Jiang, Yun Xia, Qijun Zhou, Xiaorui Xu, Qi Zhou, Zhaoji Li, Bo Zhang, "4.5kV Insulated Gate Triggered Thyristor (IGTT) with High di/dt Characteristics for Pulse Power Applications," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 347-350. doi: 10.1109/ISPSD.2019.8757584.

    11. [C36] Xin Ming, Xuan Zhang, Zhi-Wen Zhang, Li Hu, Yao Qin, Xu-Dong Feng, Qi Zhou, Zhuo Wang, Bo Zhang, "A High-reliability Half-Bridge GaN FET Gate Driver with Advanced Floating Bias Control Techniques," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 127-130. doi: 10.1109/ISPSD.2019.8757625.

    12. [C35] Xiaorui Xu, Wanjun Chen, Chao Liu, Yuan Wang, Nan Chen, Fangzhou Wang, Qi Shi, Kenan Zhang, Qi Zhou, Zhaoji Li, Bo Zhang , "A Novel CSTBT with Hole Barrier for High dV/dt Controllability and Low EMI Noise," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 331-334. doi: 10.1109/ISPSD.2019.8757582.

    13. [C34] Yun Xia, Wanjun Chen, Wuhao Gao, Bin Qiao, Chao Liu, Yijun Shi, Yajie Xin, Fangzhou Wang, Yu Shi, Ruize Sun, Qi Zhou, Zhaoji Li, Bo Zhang, "A Novel Self-Regulated Potential SOI LIGBT With Low ON-State Voltage and Turn-off Loss," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 403-406. doi: 10.1109/ISPSD.2019.8757610.

    14. [C33] Yuanyuan Shi, Qi Zhou*, Wei Xiong, Xi Liu, Xin Ming, Zhaoji Li, Wanjun Chen, Bo Zhang, "Observation of self-recoverable gate degradation in p-GaN AlGaN/GaN HEMTs after long-term forward gate stress: The trapping & detrapping dynamics of hole/electron," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 423-426. doi: 10.1109/ISPSD.2019.8757599.

    15. [C32] Peng Huang, Qi Zhou*, Kuangli Chen, Xiaoqi Han, Dong Wei, Yuanyuan Shi, Wanjun Chen, Bo Zhang, "Over Kilovolt GaN Vertical Super-Junction Trench MOSFET: Approach for Device Design and Optimization," 2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD), Shanghai, China, 2019, pp. 431-434. doi: 10.1109/ISPSD.2019.8757688.

    16. [C31] Wanjun Chen, Yajie Xin, Yijun Shi, Maolin Li, Chao Liu, Qi Zhou, Zhaoji Li, Bo Zhang,  "Impact of Parasitic Elements on Power Loss in GaN-based Low-voltage and High-current DC-DC Buck Converter," 2018 1st Workshop on Wide Bandgap Power Devices and Applications in Asia, WiPDA Asia 2018, pp. 294-298, May 2018.

    17. [C30] Ruopu Zhu, Qi Zhou*, Hong Tao, Yi Yang, Kai. Hu, Dong. Wei, Liyang. Zhu, Yu. Shi, Wanjun Chen, "A split gate vertical GaN power transistor with intrinsic reverse conduction capability and low gate charge," 2018 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 212-215. doi: 10.1109/ISPSD.2018.8393640.

    18. [C29] Wanjun Chen, Hong Tao, Chao Liu, Yawei Liu, Chengfang Liu, Jie Liu, Yijun Shi, Qi Zhou, Zhaoji Li,Bo Zhang, "Application of CS-MCT in DC solid state circuit breaker (SSCB)," 2018 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 335-338. doi: 10.1109/ISPSD.2018.8393671.

    19. [C28] Yuanyuan Shi, Qi Zhou*, Qian Cheng, P. Wei, L. Zhu, D. Wei, A. Zhang, Wanjun Chen, Bo Zhang, "Bidirectional threshold voltage shift and gate leakage in 650 V p-GaN AlGaN/GaN HEMTs: The role of electron-trapping and hole-injection," 2018 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Chicago, IL, 2018, pp. 96-99. doi: 10.1109/ISPSD.2018.8393611.

    20. [C27] Yijun Shi, Wanjun Chen, Chao Liu, Guanhao Hu, Jie Liu, Xingtao Cui, Hong Tao, Jinhan Zhang, Yuanyuan Shi, Anhang Zhang, Zhaoji Li, Qi Zhou, Bo Zhang, "A high-performance GaN E-mode reverse blocking MISHEMT with MIS field effect drain for bidirectional switch," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, 2017, pp. 207-210. doi: 10.23919/ISPSD.2017.7988924.

    21. [C26] Anbang Zhang, Qi Zhou*, Wanjun Chen, Yuanyuan Shi, Zhaoji Li, Bo Zhang, "An AlGaN/GaN current regulating diode," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, 2017, pp. 203-206. doi: 10.23919/ISPSD.2017.7988923.

    22. [C25] Chao Liu, Wanjun Chen, Hong Tao, Yijun Shi, Xuefeng Tang, Wuhao Gao, Qi Zhou, Zhaoji Li, Bo Zhang, "Transient overvoltage induced failure of MOS-controlled thyristor under ultra-high di/dt condition," 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), Sapporo, 2017, pp. 139-142. doi: 10.23919/ISPSD.2017.7988930.

    23. [C24] Wanjun Chen, Chao Liu, Xuefeng Tang, Lunfei Lou, Wu Cheng, Hongquan Liu, Qi Zhou, "Experimentally demonstrate a cathode short MOS-controlled thyristor (CS-MCT) for single or repetitive pulse applications," 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, 2016, pp. 311-314. doi: 10.1109/ISPSD.2016.7520840.

    24. [C23] Qi Zhou*, Anbang Zhang, R. Zhu, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen, Bo Zhang, "Threshold voltage modulation by interface charge engineering fors high performance normally-off GaN MOSFETs with high faulty turn-on immunity," 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Prague, 2016, pp. 87-90. doi: 10.1109/ISPSD.2016.7520784.

    25. [C22] Yi Yang, Qi Zhou*, Yuanyuan Shi, Zeheng Wang, Li Liu, Kai Hu, Ruopu Zhu, Wanjun Chen and Bo Zhang, "0.3 VT/1.1 kV AlGaN/GaN lateral power diode with MIS-gated hybrid anode on silicon substrate," 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 1041-1043. doi: 10.1109/ICSICT.2016.7998644.

    26. [C21] Ruopu Zhu, Qi Zhou*, A. Zhang, Y. Shi, Z. Wang, L. Liu, B. Chen, Y. Jin, Wanjun Chen and Bo Zhang, "High performance normally-off Al2O3/GaN MOSFETs with record high threshold voltage by interface charge engineering," 2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Hangzhou, 2016, pp. 1038-1040. doi: 10.1109/ICSICT.2016.7998643.

    27. [C20] Qi Zhou, Anbang Zhang, Yuanyuan Shi, Zeheng Wang, Li Liu, Wanjun Chen and Bo Zhang, "High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode," 230th Electronchemical Society Meeting, Honolulu, Hawaii, Oct. 2016.

    28. [C19] Anbang Zhang, Qi Zhou*, Chao Yang, Yuanyuan Shi, Wanjun Chen, Zhaoji Li and Bo Zhang, "A RESURF Structure with Nano-trenches and Fins for AlGaN/GaN Device," Int. Conf. on Solid State Devices and Materials (SSDM), Tykyo, Japan, pp. 299-300, Sep. 2018.

    29. [C18] Q. Zhou*, K. Hu, Y. Yang, Q. Cheng, D. Wei, C. Dong, W. Chen and B. Zhang, "Lateral AlGaN/GaN power diode with MIS-Gated hybrid anode for ultra-low turn-on voltage and high breakdown voltage," 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS), Beijing, 2017, pp. 168-171. doi: 10.1109/IFWS.2017.8246001.

    30. [C17] Qi Zhou*, Yang Jin, Jingyu Mou, Xu Bao, Yijun Shi, Zhaoyang Liu, Jian Li, Wanjun Chen, "Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode," 2015 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Hong Kong, 2015, pp. 369-372. doi: 10.1109/ISPSD.2015.7123466. (1st oral presentation on GaN power devices of China mainland)

    31. [C16] Yuanyuan Shi, Qi Zhou, Yang Jin, Bowen Chen, Wanjun Chen, and Bo Zhang, "Impact of interface states on switching behavior of Normally-OFF AlGaN/GaN MIS-HEMTs,"11thIntl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

    32. [C15] Jinhan Zhang, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Yijun Shi, Qi Zhou, Wanjun Chen and Bo Zhang, "Microstructure and physical mechanism of Au-free ohmic contacts to AlGaN/GaN heterostructures annealed at 600 C," 11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

    33. [C14] Zhaoyang Liu, Sen Huang, Qilong Bao, Xinhua Wang, Ke Wei, Xinyu Liu, Qi Zhou, Wanjun Chen and Bo Zhang, "Study of interface traps and fixed charges between GaN(cap)/AlGaN/AlN/GaN heterostructure and SiNx gate dielectric grown by Low Pressure Chemical Vapor Deposition," 11th Intl. Conference on Nitride Semiconductors (ICNS), Aug. 2015

    34. [C13] Jinhan Zhang, Sen Huang,Qi Zhou, Xinhua Wang, Ke Wei, Guoguo Liu, Yingkui Zheng, "ON-state breakdown mechanism of GaN power HEMTs," 2014 26th  International Symposium on Power Semiconductor Devices & IC's (ISPSD),Waikoloa, HI, 2014, pp. 237-240. doi: 10.1109/ISPSD.2014.6856020.

    35. [C12] Q. Zhou*, L. Wang, X. Bao, J. Mou, Y. Shi, Z. Liu, W. Chen and B. Zhang, "High performance AlGaN/GaN power diode with edge-terminated hybrid anode," 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT), Guilin, 2014, pp. 1-3. doi: 10.1109/ICSICT.2014.7021399.

    36. [C11] Qi Zhou*, Wanjun Chen, Shenghou Liu, Bo Zhang, Zhihong Feng, Shujun Cai, Kevin J. Chen, "High breakdown voltage InAlN/AlN/GaN HEMTs achieved by Schottky-Source technology," 2013 25th International Symposium on Power Semiconductor Devices & IC's (ISPSD), Kanazawa, 2013, pp. 195-198. doi: 10.1109/ISPSD.2013.6694479. (1st ISPSD paper on GaN devices of China mainland)

    37. [C10] (Invited) Qi Zhou , W. J. Chen, S. H. Liu, B. Zhang, Z. H. Feng, S. J. Cai and Kevin J. Chen, "InAlN/GaN  Heterojunction: Prospects for Robust GaN Power Devices," 224th  Electronchemical Society Meeting, SanFrancisco, US., Oct. 2013.

    38. [C9] Q. Zhou, W. Chen, S. Liu, B. Zhang, Z. Feng, S. Cai and K. J. Chen, "High Voltage InAlN/GaN HFETs Achieved by Schottky-Contact Technology for Power Applications," 3rd Symposium on Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Technologies as part of the Fall Meeting of the Electrochemical-Society, San Francisco, CA, Oct. 2013.

    39. [C8] L. Yuan, H. Chen, Q. Zhou, C. Zhou and K. J. Chen, "A novel normally-off GaN power tunnel junction FET," 2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs, San Diego, CA, 2011, pp. 276-279. doi: 10.1109/ISPSD.2011.5890844.

    40. [C7] Hongwei Chen, Li Yuan, Qi Zhou, Chunhua Zhou, and Kevin J. Chen, "Normally-off AlGaN/GaN Power Tunnel-Junction FETs," 9th Int. Conf. on Nitride Semiconductors (ICNS), Glasgow, Scotland, Jul. 2011.

    41. [C6] K. J. Chen, L. Yuan, M. J. Wang, H. Chen, S. Huang, Q. Zhou, C. Zhou, B. K. Li and J. N. Wang, "Physics of fluorine plasma ion implantation for GaN normally-off HEMT technology," 2011 International Electron Devices Meeting, Washington, DC, 2011, pp. 19.4.1-19.4.4. doi: 10.1109/IEDM.2011.6131585.

    42. [C5] Qi Zhou, Sen Huang, Hongwei Chen, C. Zhou, Zhihong Feng, Shujun Cai and K. J. Chen, "Schottky source/drain Al2O3/InAlN/GaN MIS-HEMT with steep sub-threshold swing and high ON/OFF current ratio," 2011 International Electron Devices Meeting, Washington, DC, 2011, pp. 33.4.1-33.4.4. doi: 10.1109/IEDM.2011.6131664.

    43. [C4] Q. Zhou*, H. Chen, C. Zhou, Z. Feng, S. Cai and K. J. Chen, "Observation of trap-assisted steep sub-threshold swing in schottky source/drain Al2O3/InAlN/GaN MISHEMT," 69th Device Research Conference, Santa Barbara, CA, 2011, pp. 71-72. doi: 10.1109/DRC.2011.5994417.

    44. [C3] Qi Zhou*, Hongwei Chen, Chunhua Zhou, Z. H. Feng, S. J. Cai, and Kevin J. Chen, "InAlN/GaN Schottky  Source/Drain MIS-HEMT with High Breakdown Voltage," Int. Conf. on Solid State Devices and Materials (SSDM), Nagoya, Japan, pp. 624-625, Sep. 2011.

    45. [C2] Qi Zhou*, K. Wong, W. Chen and K. J. Chen, "High-dynamic-range zero-bias microwave detector using AlGaN/GaN-based lateral field-effect diode," 2009 IEEE Electrical Design of Advanced Packaging & Systems Symposium (EDAPS), Shatin, Hong Kong, 2009, pp. 1-4. doi: 10.1109/EDAPS.2009.5403979.

    46. [C1] Qi Zhou*, King Yue Wong, Wanjun Chen, and Kevin J. Chen, "Microwave Detector Using AlGaN/GaNHEMT-Compatible Lateral-Field Effect Rectifier (L-FER)," Topical Workshop on Heterostructure Microelectronics (TWHM), Nagano, Japan, Aug. 2009.

       


  • Granted

    1. An ESD protection circuit based on group III-nitrides, CN114301044B, 2022

    2. A gallium nitride 3D-RESURF field-effect transistor and manufacturing method thereof,  CN113078204A, 2021

    3. A full GaN integrated gate drive circuit with dead time control, CN113162373A, 2021

    4. A full GaN integrated half-bridge dead time regulation circuit, CN111181375A, 2020

    5. GaN MIS gate-controlled mixed-channel power field-effect transistor and manufacturing method thereof, CN111370470A, 2020

    6. A GaN device dynamic on-resistance measurement circuit, CN111289799A, 2020

    7. A GaN longitudinal reverse junction FET, CN111293176A, 2020

    8. A half-bridge circuit straight-through protection circuit, CN109921779A, 2019

    9. A current-limiting diode, CN107507858A, 2017

    10. A hybrid anode diode with a Nano-Fin gate structure, CN107527952A, 2017

    11. A GaN heterojunction longitudinal reverse FET, CN107482059A, 2017

    12. GaN hetero-junction vertical inverse-conduction field effect transistor, CN107393954A, 2017

    13. Three-dimensional multi-trench gate enhanced HEMT device and preparation method thereof, CN105609551A, 2015




Personal information

Professor
Supervisor of Doctorate Candidates

Honors and Titles : 中国电子学会优秀科技工作者(2017)
四川省电子学会“电子科学技术奖”一等奖(2015)

Gender : Male

Alma Mater : Hong Kong University of Science and Technology

Education Level : With Certificate of Graduation for Doctorate Study

Degree : Doctor of Philosophy

Status : On the job

School/Department : School of Electronic Science and Engineering(National Exemplary School of Microelectronics), University of Electronic Science and Technology of China

Discipline:Microelectronics and Solid State Electronics

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