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Impact of Termination Region on Switching Loss for SiC MOSFET

2020-07-08 Hits:

Journal:IEEE Transactions on Electron Devices

Volume:66

Issue:2

Page Number:1026-1031

Translation or Not:no

Date of Publication:2019-02-01

Date of Publication:2019-02-01

Pre One:An Enhanced High Frequency Performance Sic MOSFET With Self-adjusting P-shield Region Potential

Next One:An Accumulation Mode RF Laterally Double Diffused MOSFET With Improved Performance

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

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