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An Enhanced High Frequency Performance Sic MOSFET With Self-adjusting P-shield Region Potential

2020-07-08 Hits:

Journal:Semiconductor Science and Technology

Correspondence Author:Xiaochuan Deng

Volume:37

Issue:7

Page Number:085019

Translation or Not:no

Date of Publication:2022-07-01

Date of Publication:2022-07-01

Pre One:Achieving Zero Switching Loss in Silicon Carbide MOSFET

Next One:Impact of Termination Region on Switching Loss for SiC MOSFET

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

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