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Achieving Zero Switching Loss in Silicon Carbide MOSFET

2020-07-08 Hits:

Journal:IEEE Transactions on Power Electronics

Document Type:M

Volume:34

Issue:12

Page Number:12193-12199

Translation or Not:no

Date of Publication:2019-12-01

Date of Publication:2019-12-01

Pre One:Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

Next One:An Enhanced High Frequency Performance Sic MOSFET With Self-adjusting P-shield Region Potential

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

Recommended Ph.D.Supervisor 》

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