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Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

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Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics

Volume:7

Issue:3

Page Number:1505-1512

Translation or Not:no

Date of Publication:2019-03-01

Date of Publication:2019-03-01

Pre One:Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET

Next One:Achieving Zero Switching Loss in Silicon Carbide MOSFET

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

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