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Failure Mechanism of Avalanche Condition for 1200V Double Trench SiC MOSFET

2023-02-02 Hits:

Journal:IEEE Journal of Emerging and Selected Topics in Power Electronics

Correspondence Author:Xiaochuan Deng

Volume:9

Issue:2

Page Number:2147-2152

Translation or Not:no

Date of Publication:2021-02-01

Date of Publication:2021-02-01

Pre One:A Low-Loss Diode Integrated SiC Trench MOSFET for Improving Switching Performance

Next One:Multizone Gradient-Modulated Guard Ring Technique for Ultrahigh Voltage 4H-SiC Devices With Increased Tolerances to Implantation Dose and Surface Charges

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

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