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碳化硅功率器件终端结构及其制造方法

2020-07-08 Hits:

Affilication of Author(s):电子科技大学

Type of Patent:中国发明专利

State of Patent:授权

Service Invention or Not:no

Pre One:集成温度传感器的碳化硅VDMOS器件及其制作方法

邓小川

Gender:Male Education Level:With Certificate of Graduation for Doctorate Study Degree:Doctor of Engineering Status:On the job E-Mail:

Recommended Ph.D.Supervisor 》

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