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集成温度传感器的碳化硅VDMOS器件及其制作方法
2020-07-08 Hits:Affilication of Author(s):电子科技大学
Type of Patent:中国发明专利
State of Patent:授权
Service Invention or Not:no
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Gender:Male
Education Level:With Certificate of Graduation for Doctorate Study
Degree:Doctor of Engineering
Status:On the job
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