发表刊物：ACS Applied Electronic Materials

关键字：GaN, Light Emission, quantum well, nanowire

摘要：Because of the strong strain in nitrides, superlattice layers have been used to release the strain in the QW and reduce the quantum confined Stark effect. However, few reports discuss comprehensively the strain relaxation behavior and optical performance of a GaN/AlGaN single quantum well (QW) with inserted GaN/AlGaN superlattices (SLs). In this work, we examined a group of graded Al content GaN/AlxGa1–xN SL layers under the GaN/Al0.3Ga0.7N single QW grown on c-plane sapphire. Both the excitation power and temperature dependence of the time-integrated micro-photoluminescence (μ-PL) and time-re

论文类型：SCI

学科门类：工学

一级学科：电子科学与技术

文献类型：M

是否译文：否

发表时间：2020-01-03