论文名称为“A high-efficiency 28 GHz/39 GHz dual-band power amplifier MMIC for 5G communication”。针对现有双频功率放大器效率低的问题，该文提出了一种基于低损耗和大驱动比设计的高效率双频功率放大器。在29.6 GHz和39 GHz下，双频功率放大器在3 dB压缩点（P_{3 dB}）处的测量增益分别为19.1和20.3 dB，在23.8 dBm输出功率下的功率增加效率（PAE）为51.3%，在23.7 dBm输出功率下的PAE为49.5%。工作主要完成人谢恒、程钰间、樊勇。

论文链接：https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9477595

Abstract— A high-efficiency 28 GHz/39 GHz concurrent dual-band power amplifier (PA) is proposed using the 90 nm GaAs pseudomorphic high-electron mobility transistor (pHEMT) process for the millimeter-waveband fifth generation (5G) communication application in this letter. Its high efficiency is achieved by adopting a low-loss dual-band output matching network (OMN) and employing a large power push ratio (3:1) for the driver stage and the output stage under the same bias voltage. The dual-band PA has the measured gain of 19.1 and 20.3 dB, as well as the power added efficiency (PAE) of 51.3% with the 23.8-dBm output power and 49.5% with the 23.7-dBm output power at the 3 dB compression point (P3 dB), at 29.6 and 39 GHz, respectively. The area of the proposed dual-band PA is 1.45 mm × 1.2 mm including pads.

Index Terms—Dual band, GaAs, high efficiency, millimeterwave, power amplifier (PA).