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Journal:Physical Review Applied
Abstract:Achieving Ohmic contact for two-dimensional- (2D) based electronics is important yet challenging.
Here through first-principles calculations, we predict that a NbS2 monolayer is an excellent electrode for
p-type Ohmic contacts for 2D materials. Dipole analysis indicates van der Waals interfacial interaction
and high electrode work function are critical for asymmetric dipole compensation to maintain the Ohmic
contact for NbS2/BP and NbS2/WSe2. p-type Ohmic contacts for both heterostructures are independent
of gating up to very large electric field (7 V/nm) suggesting good stability for device a
Discipline:Natural Science
First-Level Discipline:Physics
Volume:12
Page Number:064061
Translation or Not:no
Date of Publication:2019-12-24
Links to published journals:https://journals.aps.org/prapplied/cited-by/10.1103/PhysRevApplied.12.064061