Affiliation of Author(s):[1]电子科技大学,电子薄膜与集成器件国家重点实验室,成都610054;[2]电子科技大学,通信抗干扰技术国家级重点实验室,成都610054
Journal:Acta Physica Sinica
Key Words:vanadium dioxide, electrically-driven metal-insulator transition, silicon substrate, aluminium oxide
Abstract:Quality enhanced VO2 thin films have been sputtering deposited on silicon substrates by introducing an ultrathin Al2 O3 buffer between the substrate and the film. With a preferred orientation （011）, the VO2 films have an excellent thermal-induced metal-insulator transition （MIT）. The electrically-driven MIT （E-MIT） characteristics have also been investigated by applying voltage to VO2 thin film based two-terminal device at particular temperatures. Sharp jumps in electric current are observed in the I-V curve with a variation of amplitude by two orders. The threshold voltage decreases with increasing temperature. At room tempature, the threshold voltage is 8.6V and the phase transition ccurs in a voltage width of only 0.1V. With the sharp and fast phase change, the VO2 thin films can be used in ultrafast switching electronic devices.
Document Type:Article
Volume:64
Issue:1
Page Number:017102-1-017102-5
ISSN No.:1000-3290
Translation or Not:no
CN No.:11-1958/O4