Wen Qiye
+
Doctor of Engineering
With Certificate of Graduation for Doctorate Study
Personal Information
Gender:Male
Date of Employment:2005-04-01
E-Mail:
Other Contact Information
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Doctor of Engineering
With Certificate of Graduation for Doctorate Study
Gender:Male
Date of Employment:2005-04-01
E-Mail:2dfae7fbc3b4eee77cbc83e6dc0991c98a03764bcc68440b36c566a8436e2ae8a1583db720d39738c58ecf51abdfc0792241b0c642189c27038028cf0502664fcf2ad60fb7a8e4099e84c7a18122e783ed3307500b5c9fbe19c3e89a1d71dd219103fa75b78e4c54f92297151d3fe6fc58621daf6a763c7e396f0951bd7581e1
Email:c045ee02cf98f3c8badd036e7bb5177b47f43a3c5e8068fdb1fbaf5b1a2b1c379d52673dfd4418a27d6de7464b5824033fcc7853b02961697e9d54402740773f73b957f231b409a9b1301b36a226460ea4a21a697903124a28bd1e0b5beb7fc196c290c4a3c04f9e1afef461deb669e658a79d928965266b30d2529ad49f5d79
Affiliation of Author(s):[1]电子科技大学微电子与固体电子学院,成都610054
Journal:Journal of Functional Materials and Devices
Key Words:spin-valves ; giant magneto-resistance ; amorphous film
Abstract:The spin valve structure magnetic multilayer arrays of CoNbZr/Co/Cu/Co and NiFe/Co/Cu/ Co were fabricated by lift - off technology. The static GMR and dynamics GMR behaviors were measured. The results show that CoNbZr layer has good linear response to the rapid changes of magnetic field. The CoNbZr/Co/Cu/Co spin valve element shows good GMR characteristics compared with the NiFe/Co/Cu/ Co spin valve element. The CoNbZr/Co/Cu/Co spin - valve element can be applied to spin - electronic devices including magnetic random access memory.
Document Type:Journal article (JA)
Volume:12
Issue:1
Page Number:40-44
ISSN No.:1007-4252
Translation or Not:no
CN No.:31-1708/TB
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