Wen Qiye

Doctor of Engineering

With Certificate of Graduation for Doctorate Study

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Gender:Male
Date of Employment:2005-04-01
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Home > Scientific Research > Paper Publications

Defect-bound carrier mediated room-temperature ferromagnetism in co-doped ZnO powders

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Affiliation of Author(s):[1]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China;[2]Univ Delaware, Dept Phys & Astron, Newark, DE 19716 USA
Journal:CHINESE PHYSICS LETTERS
Key Words:II-VI semiconductors - Frequency modulation - Powders - Room temperature - Magnetic moments - Magnetic semiconductors - Zinc oxide - Wide band gap semiconductors
Abstract:We prepare pure single-phase Co:ZnO powders introducing controllable interstitial Zn-i by Zn vapour annealing. The as-ground powder shows that no room-temperature ferromagnetism (RT-FM) exists, while the Zn vapour treated samples exhibit unambiguous RT-FM with a maximum magnetic moment of 0.2 mu(B)/Co. The FM of Co:ZnO strongly depends on the Zn diffusion process, suggesting that not only carriers but also Zn, defects play an important role in mediating FM in diluted magnetic semiconductors. A new core-shell model is proposed to interpret the mixture behaviour of FM and paramagnetism observed in the Zn vapour annealed Co:ZnO powders.
Document Type:Article
Volume:24
Issue:10
Page Number:2955-2958
ISSN No.:0256-307X
Translation or Not:no
CN No.:11-1959/O4